PK5E4BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 35A. 4The Power dissipation is based on RqJA t ≦10s value. Pulsed Drain Current1 W Junction-to-Case VGSGate-Source Voltage t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA A V 4.2 ° C / W ± 20 IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 IAS 21 RqJC UNITS 120 TYPICAL VDS 30 V ID LIMITS TC = 25 ° C Avalanche Energy L =0.1mH RDS(ON) Drain-Source Voltage 9.5mΩ @VGS = 10V 40A ID TC = 25 ° C TA = 70 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS THERMAL RESISTANCE TC = 100 ° CPower Dissipation TJ, Tstg PD Steady-State 2.5 Continuous Drain Current TA = 25 ° C mJ RqJA PD W ID Avalanche Current EAS MAXIMUM TA= 70 ° C 11 Power Dissipation4 TA = 25 ° C 3.9 REV 1.0 1 2017/1/6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.5 2.3 ± 100 nA 10 15 7 9.5 30 S 530 155 2.5 Ω VGS =10V 13.5 VGS =4.5V 7.7 4.5 24 A 1.2 V 14 nS 4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. VGS = 4.5V, ID = 8.8A V IF = 11A, dlF/dt = 100A / mS RDS(ON) SYMBOL V(BR)DSS TEST CONDITIONS UNITS Coss VDS = 0V, VGS = ± 20V gfs STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD Forward Transconductance1 trr IF = 11A, VGS = 0V nSVDS = 15V, ID @ 11A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate Resistance VDS = 5V, ID = 11A QgTotal Gate Charge2 Ciss PARAMETER Output Capacitance Drain-Source Breakdown Voltage VGS = 10V , ID = 11A VDS = 20V, VGS = 0V, TJ = 55 ° C Qgd Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz VDS = 15V, VGS = 10V, ID = 11A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate-Body Leakage VGS(th) LIMITS REV 1.0 2 2017/1/6

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/6

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/6

N-Channel Enhancement Mode MOSFET REV 1.0 5 2017/1/6

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2017/1/6

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/6

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/6