PK5C8EA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5X6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 50A. TA= 70 ° C 17 Power Dissipation TA = 25 ° C 2 Continuous Drain Current TA = 25 ° C ID W mJ RqJA PD W1.3 Power Dissipation TJ, Tstg PD Pulsed Drain Current1 168 TA = 70 ° C TC = 100 ° C ID TC = 25 ° C 30V Continuous Drain Current3 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 2.4mΩ @VGS = 10V 82A Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH Junction-to-Case RqJC LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 58 UNITS 150 TYPICAL VDS 30 V ID IDM SYMBOL Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 VGSGate-Source Voltage A V 4 ° C / W ± 20 REV 1.0 1 2015/9/15

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 3 ± 30 uA 2.9 3.6 2 2.4 100 S 2665 624 416 1.3 Ω VGS =10V 64 VGS =4.5V 35 20.6 25 A 1.2 V 29 nS 14 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. LIMITSPARAMETER Output Capacitance VGS = 10V , ID = 20A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, VGS = 10V, ID = 20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance QgTotal Gate Charge2 Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Drain-Source Breakdown Voltage Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS Ciss VDS = 5V, ID = 20A VDS = 0V, VGS = ± 16V gfs RDS(ON) Forward Transconductance1 STATIC V(BR)DSS TEST CONDITIONS IF = 20A, dlF/dt = 100A / mS UNITS Coss Crss VGS = 4.5V, ID = 20A V REV 1.0 2 2015/9/15

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/9/15

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/9/15

N-Channel Enhancement Mode MOSFET REV 1.0 5 2015/9/15

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2015/9/15

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/9/15

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/9/15