PK5A1BA UNIKC | Alldatasheet

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P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested PDFN 5x6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) W Continuous Drain Current Power Dissipation3 TA = 25 ° C TA = 70 ° C TA = 25 ° C TA = 70 ° C -30 PD -20 VGS LIMITS °C-55 to 150 mJ UNITS -100 V A-18 -48 -39 -14.5 3.5 2.2 IDM Avalanche Current IAS Junction & Storage Temperature Range SYMBOL VDS Pulsed Drain Current1 ID TC = 25 ° C RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 6mΩ @VGS = -4.5V -48A ID -20V TJ, TSTG TC = 25 ° C TC = 100 ° C EASAvalanche Energy L = 0.1mH REV1.0 1 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25° C.The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RqJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.45 -0.6 -0.9 ± 100 nA -10 4.7 6 5.8 8 7.4 11 43 S 5731 542 420 3 Ω 6.5 11.2 187 105 Junction-to-Case Steady-State RqJC 5 ° C / W Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Gate-Drain Charge2 Gate-Source Charge2 Qgd Qgs Junction-to-Ambient2 Junction-to-Ambient2 t ≦10s 35 RqJA Qg VDS = -10V, VGS = -4.5V , ID = -3.5A STATIC MAXIMUM 52Steady-State RqJA UNITSPARAMETER V IGSS Drain-Source Breakdown Voltage VGS(th) Gate-Body Leakage VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 8V SYMBOL Input Capacitance Output Capacitance Forward Transconductance1 Reverse Transfer Capacitance Crss VDS = -10V, VGS = 0V , TJ = 125 ° C VGS = -4.5V, ID = -3.5A VDS = -5V, ID = -3.5A Zero Gate Voltage Drain Current gfs nC VGS = 0V, VDS = -10V, f = 1MHz pF Ciss Coss VGS = -2.5V, ID = -3.5A VGS = -1.8V, ID = -3.5A mA mΩ DYNAMIC VDS = -16V, VGS = 0V LIMITS THERMAL RESISTANCE SYMBOL TYPICAL nSVDS = -10V, ID @ -3.5A, VGS = -4.5V, RGS = 6Ω Rise Time2 Turn-Off Delay Time2 td(on) tr td(off) tfFall Time2 Turn-On Delay Time2 TEST CONDITIONS Drain-Source On-State Resistance1 RDS(ON) Gate Threshold Voltage IDSS VGS = 0V, ID = -250mAV(BR)DSS REV1.0 2 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET -19 A -1.3 V 41 nS 26 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Qrr Forward Voltage1 VSD IF = -3.5A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Time trr Continuous Current IS IF = -3.5A, dlF/dt = 100A / mS Reverse Recovery Charge REV1.0 3 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 4 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 5 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 6 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV1.0 7 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 8 2015/10/14

P-Channel Logic Level Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV1.0 9 2015/10/14