PK555BA UNIKC | Alldatasheet

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P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5x6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) W Continuous Drain Current Power Dissipation3 TA = 25 ° C TA = 70 ° C TA = 25 ° C TA = 70 ° C -12 PD -30 VGS LIMITS °C-55 to 150 mJ UNITS -50 V A-7.8 -19 -19.3 -6.2 3.1 IDM 7.9 Avalanche Current IAS Operating Junction & Storage Temperature Range SYMBOL VDS Pulsed Drain Current1 18.6 ± 20 ID TC = 25 ° C RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 28mΩ @VGS = -10V -19A ID -30V TJ, TSTG TC = 25 ° C TC = 100 ° C EASAvalanche Energy L = 0.1mH REV1.0 1 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25° C.The value in any given application depends on the user's specific board design. 3The Power dissipation is based on RqJA t ≦10s value. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -0.8 -1.5 -2.5 ± 100 nA -10 16 28 26 45 22 S 963 134 118 10 Ω 10.8 2.4 5.4 Junction-to-Ambient2 Junction-to-Case RqJA 63 RqJC 6.3 ° C / W t ≦10s Steady-State Steady-State Total Gate Charge2 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Gate-Drain Charge2 Gate-Source Charge2 Qgd Qgs MAXIMUM RqJA 40 Qg(VGS=-10V) VDS = -15V, ID = -6A STATIC UNITSPARAMETER V IGSS Drain-Source Breakdown Voltage VGS(th) Gate-Body Leakage VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V SYMBOL Input Capacitance Output Capacitance Forward Transconductance1 Reverse Transfer Capacitance Crss VDS = -20V, VGS = 0V , TJ = 125 ° C VGS = -10V, ID = -6A VDS = -5V, ID = -6A Zero Gate Voltage Drain Current gfs nC VGS = 0V, VDS = -15V, f = 1MHz pF Ciss Coss VGS = -4.5V, ID = -6A Qg(VGS=-4.5V) uA mΩ DYNAMIC VDS = -24V, VGS = 0V LIMITS THERMAL RESISTANCE SYMBOL TYPICAL nSVDS = -15V, ID @ -6A, VGS = -10V, RGS = 6Ω Rise Time2 Turn-Off Delay Time2 td(on) tr td(off) tfFall Time2 Turn-On Delay Time2 TEST CONDITIONS Drain-Source On-State Resistance1 RDS(ON) Gate Threshold Voltage IDSS VGS = 0V, ID = -250mAV(BR)DSS REV1.0 2 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET -20 A -1 V 11 nS 3.3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time Qrr Forward Voltage1 VSD IF = -6A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS IF = -6A, dlF/dt = 100A / mS Reverse Recovery Charge trr REV1.0 3 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 4 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 5 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 6 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV1.0 7 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 8 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV1.0 9 2016/12/30