PK501BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 9

Technical content

P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 5x6P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) TJ, TSTG TC = 25 ° C TC = 100 ° C EASAvalanche Energy L = 0.1mH RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 7mΩ @VGS = -10V -43A ID -30V SYMBOL VDS Pulsed Drain Current1 ± 25 ID TC = 25 ° C IDM Avalanche Current IAS Operating Junction & Storage Temperature Range -13 -43 -38 -10 2.2 1.4 -30 VGS LIMITS °C-55 to 150 mJ UNITS -110 V A W Continuous Drain Current Power Dissipation TA = 25 ° C TA = 70 ° C TA = 25 ° C TA = 70 ° C -27 PD REV1.0 1 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA = 25° C.The value in any given application depends on the user's specific board design. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.5 -3 ± 100 nA -10 5.7 7 8.4 12 40 S 2822 452 364 4 Ω 6.1 161 100 TEST CONDITIONS Drain-Source On-State Resistance1 RDS(ON) Gate Threshold Voltage IDSS VGS = 0V, ID = -250mAV(BR)DSS nSVDS = -15V, ID @ -13A, VGS = -10V, RGS = 6Ω Rise Time2 Turn-Off Delay Time2 td(on) tr td(off) tfFall Time2 Turn-On Delay Time2 THERMAL RESISTANCE SYMBOL TYPICAL uA mΩ DYNAMIC VDS = -24V, VGS = 0V LIMITS nC VGS = 0V, VDS = -15V, f = 1MHz pF Ciss Coss VGS = -4.5V, ID = -13A Qg(VGS=-4.5V) Input Capacitance Output Capacitance Forward Transconductance1 Reverse Transfer Capacitance Crss VDS = -20V, VGS = 0V , TJ = 125 ° C VGS = -10V, ID = -13A VDS = -5V, ID = -13A Zero Gate Voltage Drain Current gfs UNITSPARAMETER V IGSS Drain-Source Breakdown Voltage VGS(th) Gate-Body Leakage VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 25V SYMBOL MAXIMUM RqJA 56 Qg(VGS=-10V) VDS = -15V, ID = -13A STATIC Gate-Drain Charge2 Gate-Source Charge2 Qgd Qgs Total Gate Charge2 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz RqJC 5 ° C / WJunction-to-Ambient2 Junction-to-Case REV1.0 2 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET 19 A -1.3 V 23 nS 6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. IF = -13A, dlF/dt = 100A / mS Reverse Recovery Charge trr Continuous Current IS Qrr Forward Voltage1 VSD IF = -13A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Time REV1.0 3 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 4 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 5 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 6 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:3000pcs/Reel REV1.0 7 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET REV1.0 8 2016/12/30

P-Channel Logic Level Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV1.0 9 2016/12/30