PI632BZ UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 1.GATE 2.DRAIN 3.SOURCE TO-251(IS) ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A. TYPICAL °C-55 to 150Operating Junction & Storage Temperature Range SYMBOL MAXIMUM RqJCJunction-to-Case THERMAL RESISTANCE ° C / W L = 0.1mH VDS 30 ID IAS IDM 105 ± 20 TJ, TSTG RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage ID Continuous Drain Current2 TC = 25 ° C 30V Pulsed Drain Current1 3.7mΩ @VGS = 10V 105A Drain-Source Voltage LIMITS Junction-to-Ambient RqJA 62.5 UNITS 200 A SYMBOL VGS mJ V 1.7 40.8Avalanche Current Avalanche Energy WPower Dissipation EAS 74TC = 25 ° C TC = 100 ° C PD REV 1.0 1 2014/8/25
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 3.9 4.8 3.1 3.7 80 S 2140 404 237 1.6 Ω 22.4 6.2 105 A 1 V 22 nS 10 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 40A. Rg trr Qrr IS VSD IF = 20A, dlF/dt = 100A / mS Reverse Recovery Charge Continuous Current3 Forward Voltage1 Turn-On Delay Time2 Rise Time2 Reverse Recovery Time Turn-Off Delay Time2 Fall Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN =6Ωtd(off) tf td(on) tr IF = 20A, VGS = 0V V STATIC LIMITS UNITS VGS = 0V, VDS = 0V, f = 1MHz PARAMETER SYMBOL Qgd TEST CONDITIONS gfs Reverse Transfer Capacitance Total Gate Charge2 Qg(VGS = 4.5V) IGSS IDSS Gate-Body Leakage VDS = 20V, VGS = 0V , TJ = 125 ° C nC VDS = 5V, ID = 20AForward Transconductance1 Output Capacitance VGS = 0V, VDS = 15V, f = 1MHz pF Ciss Coss Input Capacitance DYNAMIC Crss Qg(VGS = 10V) VDS = 15V, ID = 20A Gate-Source Charge2 Gate-Drain Charge2 Qgs Gate Resistance Drain-Source Breakdown Voltage Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 15A mA mΩVGS = 10V, ID = 20A VGS(th) VGS = 0V, ID = 250mAV(BR)DSS VDS = 24V, VGS = 0V Zero Gate Voltage Drain Current VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V Gate Threshold Voltage REV 1.0 2 2014/8/25
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/8/25
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/8/25
N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/8/25