PF610BC UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. VDS 100 V W mJ RqJA PD ° C / W Pulsed Drain Current1 1.9 TA = 70 ° CPower Dissipation TJ, Tstg VGSGate-Source Voltage 7.2 ± 20 ID TA = 25 ° C 100V Continuous Drain Current TA = 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 0.7Ω @VGS = 10V 1.1A Drain-Source Voltage Junction-to-Ambient THERMAL RESISTANCE Avalanche Energy L =1mH 3.8 Junction-to-Case RqJC 1.2 LIMITS TA = 25 ° C EAS MAXIMUM Avalanche Current IAS UNITS 0.9 TYPICAL ID IDM SYMBOL A V 1.1 Junction & Storage Temperature Range SYMBOL °C-55 to 150 Ver 1.0 1 2013-11-6
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 100 1 1.8 3 ± 100 nA 0.6 0.9 0.5 0.7 1.7 S 244 1.5 Ω 1.1 A 1.2 V 34 nS 37 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) Ω VGS = 4.5V , ID = 0.5A SYMBOL QgTotal Gate Charge2 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 0.9A Gate-Drain Charge2 Gate-Source Charge2 Gate Resistance LIMITS Input Capacitance VGS = 0V, VDS = 25V, f = 1MHzOutput Capacitance VGS = 10V , ID = 0.9A Reverse Transfer Capacitance VDS = 5V, ID = 0.9A VDS = 80V, VGS = 0V, TJ = 70 ° C Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Rg Ciss PARAMETER IF = 0.9A, VGS = 0V nSVDS = 50V, ID @ 0.9A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC VDS = 80V, VGS = 0V Qgd pF VDS = 0V, VGS = ± 20V gfsForward Transconductance1 STATIC Drain-Source Breakdown Voltage V V(BR)DSS TEST CONDITIONS IF=2A,dl/dt = 100A / μS UNITS Coss Crss IDSS Ver 1.0 2 2013-11-6
N-Channel Enhancement Mode MOSFET Ver 1.0 3 2013-11-6
N-Channel Enhancement Mode MOSFET Ver 1.0 4 2013-11-6
N-Channel Enhancement Mode MOSFET Ver 1.0 5 2013-11-6