PE800BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS G. GATE D. DRAIN S. SOURCE 100% UIS Tested PDFN 3X3P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is 20A. 3.1 TJ, Tstg TA = 25 ° C TC = 25 ° C EAS TYPICAL RqJC Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 5.3 LIMITS MAXIMUM ± 20 V ° C / W UNITS VGS mJ VDS 30 V THERMAL RESISTANCE RqJA 49A Gate-Source Voltage Drain-Source Voltage SYMBOL IDM ID TC = 25 ° C 30V TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 5.7mΩ @VGS = 10V Avalanche Energy L =0.1mH TA = 70 ° C Pulsed Drain Current1 Avalanche Current TA = 25 ° C ID PD TC = 100 ° C IAS Steady-StateJunction-to-Case Power Dissipation Power Dissipation3 W Continuous Drain Current4 Continuous Drain Current4 TA= 70 ° C A 85RqJA t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State REV 1.0 1 2018/9/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.9 2.3 ± 100 nA 6.8 8.8 4.4 5.7 85 S 1115 537 1.5 Ω 20 A 1.2 V 31 nS 16 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 20A. VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA UNITS Gate-Body Leakage VGS(th) V(BR)DSS LIMITS IF = 13A, dlF/dt = 100A / mS Coss Drain-Source Breakdown Voltage V VGS = 10V , ID = 13A nC Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V VGS = 4.5V, ID = 13A Zero Gate Voltage Drain Current Gate Resistance Rg QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 13A, VGS = 0V nSVDS= 15V, ID @ 13A, VGS = 10V, RGEN= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 VDS = 15V ,VGS = 10V, ID = 13A VGS = 0V, VDS = 15V, f = 1MHz Qgd Forward Transconductance1 VDS = 5V, ID = 13A RDS(ON) Rise Time2 VGS = 0V, VDS = 0V, f = 1MHz VDS = 0V, VGS = ± 20V gfs Qg(VGS=4.5V) Drain-Source On-State Resistance1 STATIC TEST CONDITIONS IDSS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Qg(VGS=10V) Crss Output Capacitance Input Capacitance Gate Threshold Voltage PARAMETER IGSS Ciss pF VDS = 30V, VGS = 0V, TJ =55 ° C SYMBOL REV 1.0 2 2018/9/19

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：P7） B. Tape&Reel Information:5000pcs/Reel REV 1.0 7 2018/9/19

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2018/9/19