PE6D0BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested PDFN 3X3P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) Power Dissipation3 V A 20.8 mJ Operating Junction & Storage Temperature Range °C-55 to 150 UNITS VDS 30 SYMBOL IDM VGS LIMITS TC = 25 ° C EAS 22 W3.1 Avalanche Energy L =0.1mH ID TC = 25 ° C 30V TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 10.5mΩ @VGS = 10V 32A Gate-Source Voltage ± 20 8.3 TA = 70 ° C 2 TA = 25 ° C IAS 21Avalanche Current Power Dissipation TC = 100 ° C TJ, Tstg ID Pulsed Drain Current1 Continuous Drain Current4 PD TA = 25 ° C TA = 70 ° CContinuous Drain Current ID REV 1.0 1 2016/12/23

N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is 24A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 10.3 14 7 10.5 37 S 531 142 1.2 Ω 5.6 1.2 3.3 THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Ambient2 t ≦10s RqJA 40 RqJA 68 Junction-to-Case Steady-State RqJC 6 Zero Gate Voltage Drain Current IGSS ° C / W UNITS Coss Drain-Source Breakdown Voltage V Junction-to-Ambient2 Steady-State SYMBOL V(BR)DSS TEST CONDITIONS STATIC VGS = 0V, ID = 250mA Ciss VDS = 5V, ID = 13A VDS = 0V, VGS = ± 20V gfs RDS(ON) IDSS VGS = 4.5V, ID = 13A Forward Transconductance1 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF nSVDS= 15V, ID @ 13A, VGS = 10V, RGEN= 6Ω td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA Qg(VGS=4.5V) LIMITS VDS = 15V,VGS = 10V, ID = 13A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 13A Gate-Body Leakage VGS(th) VDS = 20V, VGS = 0V, TJ = 55 ° C REV 1.0 2 2016/12/23

N-Channel Enhancement Mode MOSFET 17 A 1.2 V 9.7 nS 2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 24A. IF = 13A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 13A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) REV 1.0 3 2016/12/23

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/23

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：K3） B. Tape&Reel Information:5000pcs/Reel REV 1.0 7 2016/12/23

N-Channel Enhancement Mode MOSFET REV 1.0 8 2016/12/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2016/12/23