PE6A6BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested PDFN 3X3P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is 13A. 58RqJA t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State Steady-StateJunction-to-Case TA= 70 ° C Continuous Drain Current4 Continuous Drain Current4 Power Dissipation Power Dissipation3 Pulsed Drain Current1 Avalanche Current TA = 25 ° C ID PD TC = 100 ° C W Avalanche Energy L =0.1mH TA = 70 ° C ID TC = 25 ° C 40V TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 8mΩ @VGS = 10V 43A Gate-Source Voltage Drain-Source Voltage THERMAL RESISTANCE RqJA SYMBOL IDM IAS 31 VGS mJ 13.8 VDS 40 V LIMITS MAXIMUM ± 20 V ° C / W 31.2 UNITS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 12.5 RqJC 3.1 TJ, Tstg TA = 25 ° C A TC = 25 ° C EAS TYPICAL REV 1.0 1 2018/7/30

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 5.4 12 4.6 8 75 S 1916 215 147 1 Ω 4.8 8.3 24 A 1.3 V 20 nS 8.1 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 13A. pF Input Capacitance Gate Threshold Voltage PARAMETER IGSS Ciss VDS = 30V, VGS = 0V, TJ = 55 ° C SYMBOL IDSS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Qg(VGS=10V) Crss Output Capacitance Drain-Source On-State Resistance1 STATIC TEST CONDITIONS Rise Time2 VGS = 0V, VDS = 0V, f = 1MHz VDS = 0V, VGS = ± 20V gfs Qg(VGS=4.5V) Turn-Off Delay Time2 Fall Time2 VDS = 20V , VGS = 10V, ID = 11A VGS = 0V, VDS = 20V, f = 1MHz Qgd Forward Transconductance1 VDS = 5V, ID = 11A RDS(ON) IF = 11A, VGS = 0V nSVDS = 20V, ID @ 11A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC Qgs mA DYNAMIC mΩ VDS = 32V, VGS = 0V VGS = 4.5V, ID = 11A Zero Gate Voltage Drain Current Gate Resistance Rg VGS = 10V , ID = 11A IF = 11A, dlF/dt = 100A / mS Coss Drain-Source Breakdown Voltage V VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA UNITS Gate-Body Leakage VGS(th) V(BR)DSS LIMITS REV 1.0 2 2018/7/30

N-Channel Enhancement Mode MOSFET REV 1.0 3 2018/7/30

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N-Channel Enhancement Mode MOSFET REV 1.0 5 2018/7/30

N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：N4） B. Tape&Reel Information:5000pcs/Reel REV 1.0 6 2018/7/30

N-Channel Enhancement Mode MOSFET REV 1.0 7 2018/7/30

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2018/7/30