PE674DT UNIKC | Alldatasheet
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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V Q1 30V PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3Package limitation current is Q2= 19A , Q1= 11A. IAS 1.7 EAS TA = 25 ° C UNITS 9.5 VGS IDM 30VDS mJ ± 20 Drain-Source Voltage V 1.1 ± 20 A ID °CTJ, Tstg 17.5 Avalanche Energy L = 0.1mH 15.3 1.4 Power Dissipation Gate-Source Voltage TC = 25 ° C TA = 70 ° C 7.6 Continuous Drain Current3 TC = 25 ° C ID TA = 70 ° C THERMAL RESISTANCE Operating Junction & Storage Temperature Range Pulsed Drain Current1 W ID 39A 31A10.5mΩ @VGS = 10V 7mΩ @VGS = 10V Q2SYMBOLPARAMETERS/TEST CONDITIONS RDS(ON) 7.6 26.4 Avalanche Current TC = 100 ° C Continuous Drain Current3 TA = 25 ° C -55 to 150 Power Dissipation PD PD 8.3 2.2 TC = 100 ° C UNITSTYPICAL MAXIMUM SYMBOL Junction-to-Ambient2 6.5 ° C / W Junction-to-case RqJA RqJA RqJC RqJC REV 1.0 1 2016/11/8
Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.75 2.3 Q1 1.3 1.75 2.3 Q2 ± 100 Q1 ± 100 Q2 1 Q1 1 Q2 10 Q1 10 Q2 6.7 9.5 Q1 10.2 15.5 Q2 5 7 Q1 7.5 10.5 Q2 66 Q1 50 Q2 961 Q1 627 Q2 185 Q1 129 Q2 121 Q1 97 Q2 19.3 Q1 14 Q2 11.2 Q1 7.8 Q2 2.1 Q1 1.6 Q2 5.9 Q1 4.1 Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 4.5V Gate-Source Charge2 VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage UNITS Qgd VDS = 15V , VGS = 10V, ID = 10A VDS = 15V , VGS = 10V, ID = 9.5A Qgs Gate-Drain Charge2 Coss Crss VGS = 0V, VDS = 15V, f = 1MHzOutput Capacitance nC Ciss Total Gate Charge2 DYNAMIC STATIC SYMBOLPARAMETER TEST CONDITIONS LIMITS Input Capacitance VGS = 10V, ID = 9.5A pF Qg VGS = 10V Reverse Transfer Capacitance VDS = 24V, VGS = 0V mΩ Forward Transconductance1 gfs VDS = 5V, ID = 9.5A S Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 9A VGS = 10V, ID = 10A VDS = 5V, ID = 10A VGS = 4.5V, ID = 10A V VDS = 0V, VGS = ± 20V nA VDS = 20V, VGS = 0V , TJ = 55 ° C Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS VGS = 0V, ID = 250mA mA REV 1.0 2 2016/11/8
Dual N-Channel Enhancement Mode MOSFET Q2 13 Q1 12 Q2 57 Q1 48 Q2 35 Q1 27 Q2 70 Q1 39 Q2 16 Q1 17 Q2 1.2 Q1 1.1 Q2 12 Q1 10.5 Q2 3 Q1 3 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is Q2=19A , Q1=11A. VDS = 15V , ID10A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 9.5A, VGS = 10V,RGEN =6Ω tr nC nS Rise Time2 nS V Turn-On Delay Time2 td(on) Turn-Off Delay Time2 Fall Time2 td(off) tf Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 10A, dlF/dt = 100A /mS IF = 9.5A, dlF/dt = 100A /mS Forward Voltage1 VSD IF = 10A, VGS = 0V IF = 9.5A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 IS A REV 1.0 3 2016/11/8
Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/11/8
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Dual N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：M6) B. Tape&Reel Information:5000pcs/Reel REV 1.0 9 2016/11/8
Dual N-Channel Enhancement Mode MOSFET REV 1.0 10 2016/11/8
Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 11 2016/11/8