PE636BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 13A A V 7 ° C / W 17.8 100 mJ W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 30 V SYMBOL IDM VGS LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 20 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C 30V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 9mΩ @VGS = 10V 33A Gate-Source Voltage ± 20 TA = 70 ° C 1 TC = 100 ° C TJ, Tstg RqJA TA= 70 ° C 8 TA = 25 ° C 1.7 TA = 25 ° C ID Pulsed Drain Current1 Continuous Drain Current3 Power Dissipation PD REV 1.1 1 2016/3/7

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 9.9 12 7.4 9 34 S 774 139 3.1 Ω 15.5 8.3 2.2 4.4 14.8 A 1.2 V 9.5 nS 1.4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 13A. Zero Gate Voltage Drain Current IGSS IF = 10A, dlF/dt = 100A / mS UNITS Coss Drain-Source Breakdown Voltage V VGS = 4.5V, ID = 10A V(BR)DSS TEST CONDITIONS Ciss VDS = 10V, ID = 10A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDD= 15V, ID @ 10A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) LIMITS VDS = 15V , ID = 10A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Qg(VGS=4.5V) Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 10A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL REV 1.1 2 2016/3/7

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：I6） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2016/3/7

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2016/3/7