PE632BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 23A. 3The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. TA= 70 ° C 12 TA = 25 ° C 2 TA = 25 ° C ID Pulsed Drain Current1 Continuous Drain Current2 Power Dissipation PD TC = 100 ° C TJ, Tstg RqJA ± 20 TA = 70 ° C 1.3 ID Tc = 25 ° C 30V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 4.5mΩ @VGS = 10V 53A Gate-Source Voltage Junction-to-Ambient3 THERMAL RESISTANCE Avalanche Energy L =0.1mH IAS 37.5 Junction-to-Case RqJC IDM VGS LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current UNITS TYPICAL VDS 30 V SYMBOL W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 A V 5.5 ° C / W 22.7 100 mJ REV 1.1 1 2016/5/3

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 4 5.5 3.3 4.5 60 S 2210 390 234 1.4 Ω 44.1 22.7 A 1 V 26.7 nS 12.9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 15A VDS = 20V, VGS = 0V, TJ = 125 ° C SYMBOL VDS = 15V , ID = 15A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Qg(VGS=4.5V) Crss VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) LIMITS Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg IF = 15A, VGS = 0V nSVDD= 15V, ID @ 15A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd Ciss VDS = 5V, ID = 15A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 V(BR)DSS TEST CONDITIONS Drain-Source Breakdown Voltage V VGS = 4.5V, ID = 15A IF = 15A, dlF/dt = 100A / μS UNITS Coss Zero Gate Voltage Drain Current IGSS REV 1.1 2 2016/5/3

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：H5） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2016/5/3

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2016/5/3