PE628HT UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V Q1 30V PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS 1Pulse width limited by maximum junction temperature TJ(MAX)=150° C. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. The value in any given application depends on the user's specific board design. 3Package limitation current is Q2= 19A , Q1= 5.5A. 4The Power dissipation is based on RqJA t ≦10s value. IAS 2.5 UNITS VGS IDM EAS mJ ± 20 Drain-Source Voltage V 1.6 ± 20 A ID Avalanche Energy L = 0.1mH 7.2 TJ, Tstg TA = 25 ° C 1.7 Power Dissipation4 Gate-Source Voltage TC = 25 ° C TA = 70 ° C ID TA = 70 ° C THERMAL RESISTANCE Operating Junction & Storage Temperature Range Pulsed Drain Current1 ID 39A 21A20mΩ @VGS = 10V 7.5mΩ @VGS = 10V Q2SYMBOLPARAMETERS/TEST CONDITIONS RDS(ON) 6.5 VDS Continuous Drain Current3 TC = 25 ° C Avalanche Current TC = 100 ° C Continuous Drain Current TA = 25 ° C W -55 to 150 Power Dissipation PD PD 8.6 2.7 TC = 100 ° C 6 t ≦10s Steady-StateJunction-to-Ambient2 UNITS ° C / W Q2 Max Q1 Max 55 77 SYMBOL RqJA Junction-to-case Steady-State RqJC 5.8 7.5 REV 1.1 1 2016/3/7

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX Q2 30 Q1 30 Q2 1.3 1.7 2.3 Q1 1.3 1.7 2.3 Q2 ± 100 Q1 ± 100 Q2 0.5 mA Q1 1 uA Q2 5 mA Q1 10 uA Q2 7 10.5 Q1 22 31 Q2 5.3 7.5 Q1 15.5 20 Q2 52 Q1 28 Q2 1075 Q1 323 Q2 215 Q1 71 Q2 155 Q1 47 Q2 20 Q1 7.7 Q2 11 Q1 4.2 Q2 2.4 Q1 1.3 Q2 5.8 Q1 2.2 Gate Threshold Voltage V(BR)DSS VGS(th) VGS = 0V, ID = 10mA VGS = 0V, ID = 250mA VGS = 4.5V Gate-Source Charge2 VDS = VGS, ID = 250mA Drain-Source Breakdown Voltage UNITS Qgd VDS = 15V , VGS = 10V, ID = 10A VDS = 15V , VGS = 10V, ID = 8A Qgs Gate-Drain Charge2 Coss Crss VGS = 0V, VDS = 15V, f = 1MHz nC Total Gate Charge2 DYNAMIC STATIC SYMBOLPARAMETER TEST CONDITIONS LIMITS Input Capacitance Output Capacitance pF Qg VGS = 10V Reverse Transfer Capacitance Ciss mΩ Forward Transconductance1 gfs VDS = 5V, ID = 8A S Drain-Source On-State Resistance1 RDS(ON) VGS = 4.5V, ID = 6A VGS = 10V, ID = 10A VGS = 10V, ID = 8A VDS = 5V, ID = 10A VGS = 4.5V, ID = 10A V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V nA Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V , TJ = 55 ° C REV 1.1 2 2016/3/7

Dual N-Channel Enhancement Mode MOSFET Q2 27 Q1 17 Q2 25 Q1 17 Q2 51 Q1 37 Q2 27 Q1 18 Q2 35 Q1 11 Q2 0.6 Q1 1.4 Q2 12 Q1 8.4 Q2 3.5 Q1 1.5 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is Q2=19A , Q1=5.5A. VDS = 15V , ID10A, VGS = 10V, RGEN =6Ω VDS = 15V , ID 8A, VGS = 10V,RGEN =6Ω tr nC nS Rise Time2 nS V Turn-On Delay Time2 td(on) Turn-Off Delay Time2 Fall Time2 td(off) tf Reverse Recovery Time Reverse Recovery Charge trr Qrr IF = 10A, dlF/dt = 100A /mS IF = 8A, dlF/dt = 100A /mS Forward Voltage1 VSD IF = 1A, VGS = 0V IF = 8A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 IS A REV 1.1 3 2016/3/7

Dual N-Channel Enhancement Mode MOSFET REV 1.1 4 2016/3/7

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Dual N-Channel Enhancement Mode MOSFET REV 1.1 8 2016/3/7

Dual N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：J1) B. Tape&Reel Information:5000pcs/Reel REV 1.1 9 2016/3/7

Dual N-Channel Enhancement Mode MOSFET REV 1.1 10 2016/3/7

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 11 2016/3/7