PE628BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) Continuous Drain Current3 ID Power Dissipation Pulsed Drain Current1 PD TA = 25 ° C TA = 70 ° C TC = 100 ° C TJ, Tstg TA = 70 ° C 1.1 TA = 25 ° C IAS 14.7Avalanche Current ID TC = 25 ° C 30V TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 14mΩ @VGS = 10V 27A Gate-Source Voltage Avalanche Energy L =0.1mH TC = 25 ° C EAS 10.8 W1.7 UNITS VDS 30 SYMBOL IDM VGS LIMITS ± 20 Operating Junction & Storage Temperature Range °C-55 to 150 V A mJ REV 1.0 1 2016/12/23

N-Channel Enhancement Mode MOSFET THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 11A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 14 22 11 14 32 S 427 3.8 Ω 9.1 1.2 2.6 Junction-to-Ambient2 Junction-to-Case Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 7A Gate-Body Leakage VGS(th) VDS = 20V, VGS = 0V, TJ = 55 ° C VDS = 15V, ID = 7A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Crss LIMITS Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA Qg(VGS=4.5V) nSVDD= 15V, ID @ 7A, VGEN = 10V, RG= 6Ω td(on) tr td(off) tf Turn-On Delay Time2 Forward Transconductance1 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF Ciss VDS = 5V, ID = 7A VDS = 0V, VGS = ± 20V gfs RDS(ON) IDSS VGS = 4.5V, ID = 6.8A SYMBOL V(BR)DSS TEST CONDITIONS STATIC VGS = 0V, ID = 250mA UNITS Coss Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current IGSS ° C / W RqJC 6.8 THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM RqJA 71.5 REV 1.0 2 2016/12/23

N-Channel Enhancement Mode MOSFET 18 A 1 V 10.6 nS 2.6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 11A. IF = 7A, VGS = 0V SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 7A, dlF/dt = 100A / mS REV 1.0 3 2016/12/23

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：I2） B. Tape&Reel Information:5000pcs/Reel REV 1.0 7 2016/12/23

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2016/12/23