PE616BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. V A ° C / W 16.7 100 mJ W1.7 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 30 SYMBOL IDM VGS LIMITS TC = 25 ° C EAS MAXIMUM 26.4 Avalanche Current IAS 23 RqJC THERMAL RESISTANCE Avalanche Energy L =0.1mH ID TC = 25 ° C 30V TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 7mΩ @VGS = 10V 36A Gate-Source Voltage ± 20 6.7 TA = 70 ° C 1 TA = 25 ° C RqJA TA = 70 ° CContinuous Drain Current ID TC = 100 ° C TJ, Tstg 9.2 Junction-to-Ambient2 Junction-to-Case ID Pulsed Drain Current1 Continuous Drain Current Power Dissipation PD TA = 25 ° C REV 1.1 1 2016/11/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.35 1.8 3 ± 100 nA 7 9.5 5.4 7 55 S 835 158 2.4 Ω 17.7 9.5 2.3 5.1 14 A 1.2 V 13.3 nS 5.2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Zero Gate Voltage Drain Current IGSS IF = 12A, dlF/dt = 100A / mS UNITS Coss Drain-Source Breakdown Voltage V VGS = 4.5V, ID = 12A V(BR)DSS TEST CONDITIONS STATIC VGS = 0V, ID = 250mA Ciss VDS = 5V, ID = 12A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 12A, VGS = 0V nSVDS= 15V, ID @ 12A, VGS = 10V, RGEN= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA Qg(VGS=4.5V) Crss Gate-Body Leakage VGS(th) LIMITS VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL VDS = 15V, ID = 12A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 12A REV 1.1 2 2016/11/23

N-Channel Enhancement Mode MOSFET REV 1.1 3 2016/11/23

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：G4） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2016/11/23

N-Channel Enhancement Mode MOSFET REV 1.1 7 2016/11/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2016/11/23