PE614DX

PE614DX UNIKC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 5

Technical content

Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 3Package limitation current is 7A. Avalanche Energy L = 0.1mH EAS 24 mJ TA= 70° C IDM Avalanche Current IAS 22 17.8 ° C / W Operating Junction & Storage Temperature Range SYMBOL 2kV Power Dissipation Tj, Tstg MAXIMUM W 1.6 -55 to 150 Junction-to-Case RqJC 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. THERMAL RESISTANCE TYPICAL PD ID TC= 25 ° C 20V Continuous Drain Current3 TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 12.5mΩ @VGS = 4.5V 30A Gate-Source Voltage Junction-to-Ambient2 ± 10 HBM RqJA Pulsed Drain Current1 SYMBOL LIMITS VVGS ID UNITS A TC = 100 ° C TA = 25 ° C TC = 100 ° C TA = 25 ° C 2.5 TC= 25 ° C ESD Class REV 1.2 1 2014/6/24

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.67 1 8.5 10 12.5 8.7 10.2 13.7 10 11.5 15 12.7 14.2 20.2 35 S 1105 198 169 1.4 14.8 A 1.2 V 14 nS 5.4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 7A. VDS = 5V, ID = 3A TEST CONDITIONS VGS = 2.5V, ID = 3A UNITS gfs Gate-Body Leakage VGS(th) VGS =4.5V, ID =3A mA VGS = 3.9V, ID = 3A LIMITS Drain-Source Breakdown Voltage V pF Gate-Source Charge2 Reverse Transfer Capacitance Qg(VGS = 4.5V) Input Capacitance Total Gate Charge2 Qg(VGS = 3.9V) Ciss VGS = 0V, VDS = 10V, f = 1MHzOutput Capacitance VDS =10V,ID = 3AQgs SYMBOL VDS =16V, VGS = 0V VGS = 1.8V, ID = 3A Forward Transconductance1 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time tf VSD IS trr Fall Time2 td(on) td(off) Drain-Source On-State Resistance1 RDS(ON) tr Turn-On Delay Time2 Rise Time2 DYNAMIC nS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA nC Qgd IF = 3A, dlF/dt = 100A / μS, VGS = 0V VDS = 0V, VGS = ± 8V IDSS Coss Crss SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) mΩ IF = 3A, VGS = 0V Gate-Drain Charge2 VDD = 10V, ID @ 3A, VGS = 4.5V, RGEN = 6Ω Turn-Off Delay Time2 Gate Threshold Voltage PARAMETER Zero Gate Voltage Drain Current IGSS V(BR)DSS STATIC VDS =10V, VGS = 0V, TJ = 125° C REV 1.2 2 2014/6/24

Dual N-Channel Enhancement Mode MOSFET REV 1.2 3 2014/6/24

Dual N-Channel Enhancement Mode MOSFET REV 1.2 4 2014/6/24

Dual N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.2 5 2014/6/24