PE606BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 11A. 4The Power dissipation is based on RqJA t ≦10s value. Junction-to-Case Steady-State RqJA 70 TA= 70 ° C Power Dissipation Power Dissipation4 Junction-to-Ambient2 t ≦10s Junction-to-Ambient2 Steady-State VDS 30 V TA = 25 ° C ID PD TC = 100 ° C 2.2 TJ, Tstg TA = 25 ° C Avalanche Energy L =0.1mH Pulsed Drain Current1 Continuous Drain Current3 Avalanche Current IAS 12.6 RqJC 3.5 ID Tc = 25 ° C 30V Tc = 100 ° C PARAMETERS/TEST CONDITIONS TA = 70 ° C RDS(ON) 18mΩ @VGS = 10V 23A Gate-Source Voltage Drain-Source Voltage THERMAL RESISTANCE RqJA UNITS TYPICAL SYMBOL IDM VGS LIMITS 7.9 MAXIMUM ± 20 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 V ° C / W mJ 10.6 W 8.5 A TC = 25 ° C EAS REV 1.1 1 2017/7/6

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 19 27 13 18 25 S 333 2 Ω 7.5 4.3 1.1 2.3 15 A 1.1 V 8.4 nS 2.2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 11A. Ciss pF IDSS Input Capacitance Gate Threshold Voltage PARAMETER Qg(VGS=4.5V) Crss Output Capacitance VGS = 10V , ID =7A VDS = 20V, VGS = 0V, TJ =55 ° C SYMBOL Drain-Source On-State Resistance1 STATIC TEST CONDITIONS LIMITS Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Qg(VGS=10V) Rise Time2 gfs Drain-Source Breakdown Voltage Gate-Body Leakage Gate-Drain Charge2 Turn-Off Delay Time2 Fall Time2 VDS = 15V , ID = 7A VGS = 0V, VDS = 15V, f = 1MHz Qgd Forward Transconductance1 VDS = 10V, ID = 7A VDS = 0V, VGS = ± 20V IF = 7A, VGS = 0V nSVDD= 15V, ID @ 7A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V VGS = 4.5V, ID = 6A Zero Gate Voltage Drain Current Gate Resistance Rg RDS(ON) IF = 7A, dlF/dt = 100A / μS UNITS Coss V VGS = 0V, VDS = 0V, f = 1MHz IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA VGS(th) V(BR)DSS REV 1.1 2 2017/7/6

N-Channel Enhancement Mode MOSFET REV 1.1 3 2017/7/6

N-Channel Enhancement Mode MOSFET REV 1.1 4 2017/7/6

N-Channel Enhancement Mode MOSFET REV 1.1 5 2017/7/6

N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：F2） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2017/7/6

N-Channel Enhancement Mode MOSFET REV 1.1 7 2017/7/6

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2017/7/6