PE601CA UNIKC | Alldatasheet

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N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 30V -30V 100% UIS Tested PDFN 3X3P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) CH. N P N P N P N P N P N P N P N P N P N P N P ID TC = 25 ° C TC = 100 ° C TA = 25 ° C TA= 70 ° C -7.4 6.5 SYMBOL Drain-Source Voltage VDS -30 Channel N P 22mΩ @VGS = 10V 28mΩ @VGS = -10V -19 7.1 Pulsed Drain Current1 IDM -35 V Gate-Source Voltage VGS ± 20 V -12 20A -19A Continuous Drain Current4 ± 20 7.3 Avalanche Current IAS Avalanche Energy L =0.1mH EAS 18.7 LIMITS Power Dissipation ID PARAMETERS/TEST CONDITIONS RDS(ON) -19.3 A 11.9 TC = 25 ° C mJ TC = 100 ° C PD 7.1 UNITS W 8.1 -5.9 REV 1.1 1 2015/11/12

N&P-Channel Enhancement Mode MOSFET N P N P THERMAL RESISTANCE RATINGS CH. TYPICA L UNITS N P N P N P 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3The Power dissipation is based on RqJA t ≦10s value. 4Package limitation current is N-Ch=8.3A, P-Ch=-6.9A. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX N 30 P -30 N 1 1.6 2.5 P -1 -1.5 -2.5 N ± 100 P ± 100 N 1 P -1 N 10 P -10 V nA VDS = 24V, VGS = 0V VDS = -24V, VGS = 0V Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V VDS = 0V, VGS = ± 20V VGS = 0V, ID = -250mA Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA VDS = VGS, ID = -250mA RqJC 6.8 TEST CONDITIONS CH. VGS = 0V, ID = 250mADrain-Source Breakdown Voltage V(BR)DSS ° C / W PARAMETER SYMBOL LIMITS UNITS THERMAL RESISTANCE Junction-to-Ambient2 VDS = 20V, VGS = 0V, TJ = 55 ° C Zero Gate Voltage Drain Current IDSS VDS = -20V, VGS = 0V, TJ = 55 ° C Power Dissipation3 TA = 25 ° C PD STATIC TA = 70 ° C TJ, Tstg MAXIMUM 2.7 1.7 Junction & Storage Temperature Range SYMBOL 2.7 °C-55 to 150 1.7 W mA Steady-State t≦10s 45Junction-to-Ambient2 45 RqJA Junction-to-Case Steady-State REV 1.1 2 2015/11/12

N&P-Channel Enhancement Mode MOSFET N 17.1 32 P 28.2 45 N 12.6 22 P 20.2 28 N 40 P 17.5 N 344 P 904 N 72 P 143 N 50 P 123 N 2.8 P 11.3 N 7.8 P 21 N 1 P 2 N 2 P 6.1 N 15 P 15 N 30 P 30 N 20 P 50 N 13 P 41 Turn-On Delay Time2 td(on) Total Gate Charge2 Reverse Transfer Capacitance Qgs Gate-Drain Charge2 Qgd N-Channel VDS = 15V , ID = 10A ID = 7A P-Channel VDS = -15V , VGS = -10V, ID = -6A Forward Transconductance1 gfs VDS = 10V, ID = 7A VDS = -10V, ID = -6A Output Capacitance Coss N-Channel VDS= 15V, ID @ 7A, VGS = 10V, RGEN= 6Ω P-Channel VDS = -15V, ID @ -6A, VGS = -10V, RGEN = 6Ω VGS = -10V , ID = -6A S Input Capacitance Ciss Drain-Source On-State Resistance1 Turn-Off Delay Time2 td(off) Rise Time2 tr N-Channel VGS = 0V, VDS = 15V, f = 1MHz P-Channel VGS = 0V, VDS = -15V, f = 1MHz Gate Resistance Fall Time2 nS pF Rg nC tf Crss DYNAMIC mΩ VGS = 0V, VDS = 0V, f = 1MHz Ω Qg RDS(ON) Gate-Source Charge2 VGS = 4.5V, ID = 6A VGS = -4.5V, ID = -5A VGS = 10V, ID = 7A REV 1.1 3 2015/11/12

N&P-Channel Enhancement Mode MOSFET N 15 P -18 N 1.1 P -1 N 8.6 P 12.2 N 2.1 P 3.7 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is N-Ch=8.3A, P-Ch=-6.9A. Reverse Recovery Charge Qrr IF = 7A, dlF/dt = 100A / ms IF = -6A, dlF/dt = 100A / mS nS nC VSD IF = -6A, VGS = 0V IF = 7A, VGS = 0V A V Reverse Recovery Time trr SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current3 IS Forward Voltage1 REV 1.1 4 2015/11/12

N&P-Channel Enhancement Mode MOSFET N-CHANNEL REV 1.1 5 2015/11/12

N&P-Channel Enhancement Mode MOSFET REV 1.1 6 2015/11/12

N&P-Channel Enhancement Mode MOSFET P-CHANNEL REV 1.1 7 2015/11/12

N&P-Channel Enhancement Mode MOSFET REV 1.1 8 2015/11/12

N&P-Channel Enhancement Mode MOSFET REV 1.1 9 2015/11/12

N&P-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：K9） B. Tape&Reel Information:5000pcs/Reel REV 1.1 10 2015/11/12

N&P-Channel Enhancement Mode MOSFET REV 1.1 11 2015/11/12

N&P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 12 2015/11/12