PE600BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 16A. 4The Power dissipation is based on RqJA t ≦10s value. 3.5 TJ, Tstg TA = 25 ° C A TC = 25 ° C EAS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 7RqJC LIMITS MAXIMUM ± 20 V ° C / W 17.8 UNITS TYPICAL SYMBOL IDM IAS 18.5 VGS mJ THERMAL RESISTANCE RqJA RDS(ON) 9.8mΩ @VGS = 10V 32A Gate-Source Voltage Drain-Source Voltage ID TC = 25 ° C 30V TC = 100 ° C PARAMETERS/TEST CONDITIONS Avalanche Energy L =0.1mH TA = 70 ° C VDS 30 V TA = 25 ° C ID PD TC = 100 ° C 2.3 W Steady-StateJunction-to-Case TA= 70 ° C Continuous Drain Current3 Continuous Drain Current Power Dissipation Power Dissipation4 Pulsed Drain Current1 Avalanche Current 75RqJA t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State REV 1.2 1 2018/4/28

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 10.2 14 7.8 9.8 35 S 620 108 2.5 Ω 3.8 16 A 1.1 V 12 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 16A. VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA UNITS Gate-Body Leakage VGS(th) V(BR)DSS IF = 9A, dlF/dt = 100A / mS Coss Drain-Source Breakdown Voltage V VGS = 10V , ID =9A nC Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V VGS = 4.5V, ID = 9A Zero Gate Voltage Drain Current Gate Resistance Rg QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 9A, VGS = 0V nSVDD= 15V, ID @ 9A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 VDS = 15V , ID = 9A VGS = 0V, VDS = 15V, f = 1MHz Qgd Forward Transconductance1 VDS = 10V, ID = 9A RDS(ON) Rise Time2 VGS = 0V, VDS = 0V, f = 1MHz VDS = 0V, VGS = ± 20V gfs Qg(VGS=4.5V) Crss Output Capacitance Drain-Source On-State Resistance1 STATIC TEST CONDITIONS LIMITS IDSS Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Total Gate Charge2 Qg(VGS=10V) Input Capacitance Gate Threshold Voltage PARAMETER IGSS Ciss VDS = 20V, VGS = 0V, TJ =55 ° C SYMBOL pF REV 1.2 2 2018/4/28

N-Channel Enhancement Mode MOSFET REV 1.2 3 2018/4/28

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：F1） B. Tape&Reel Information:5000pcs/Reel REV 1.2 6 2018/4/28

N-Channel Enhancement Mode MOSFET REV 1.2 7 2018/4/28

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2018/4/28