PE5M6EA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested PDFN 3X3P 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 36A. 4The Power dissipation is based on RqJA t ≦10s value. ID 18.6 Power Dissipation4 Junction-to-Ambient2 Steady-State RqJA 70 PD THERMAL RESISTANCE t ≦10s Steady-State Junction-to-Ambient2 Junction-to-Case TA = 25 ° C Avalanche Current TC = 100 ° C TJ, Tstg RqJA IAS 30 ID Tc = 25 ° C 24V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 5mΩ @VGS = 10V 51A Gate-Source Voltage Avalanche Energy L =0.1mH RqJC VGS LIMITS TC = 25 ° C ± 12 9.6 TA = 70 ° C UNITS TYPICAL VDS 24 SYMBOL IDM W3.1 EAS Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM V A 5.2 ° C / W 120 mJ Pulsed Drain Current1 Continuous Drain Current3 TA = 25 ° C TA = 70 ° C REV 1.0 1 2017/4/12

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.7 0.8 1.3 ± 30 uA 5.2 8.5 3.7 5.5 3.1 5 66 S 1803 294 225 1.9 Ω 6.7 136 20 A 1.2 V 22 nS 7.7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 36A. Drain-Source On-State Resistance1 RDS(ON) VGS = 2.5V, ID = 10A Input Capacitance VGS = 0V, VDS = 12V, f = 1MHz PARAMETER Output Capacitance VGS = 10V, ID = 15A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL Gate-Body Leakage VGS = 0V, ID = 250mA STATIC V VDS = VGS, ID = 250mA Reverse Transfer Capacitance Gate Resistance Qg(VGS=10V) Crss Qg(VGS=4.5V) Total Gate Charge2 Rg Drain-Source Breakdown Voltage VDS = 12V ,ID = 15A Rise Time2 Turn-Off Delay Time2 Forward Transconductance1 IDSS VGS(th) VGS = 4.5V, ID = 10A Gate Threshold Voltage VDS = 5V, ID = 15A VDS = 0V, VGS = ± 10V gfs Gate-Drain Charge2 Gate-Source Charge2 IF = 15A, VGS = 0V nSVDD = 12V, ID @ 15A, VGEN = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Fall Time2 QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC VDS = 20V, VGS = 0V Qgd Ciss pF V(BR)DSS TEST CONDITIONS LIMITS IF = 15A, dlF/dt = 100A / mS UNITS Coss Zero Gate Voltage Drain Current IGSS mΩ REV 1.0 2 2017/4/12

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N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：N6） B. Tape&Reel Information:5000pcs/Reel REV 1.0 7 2017/4/12

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N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 9 2017/4/12