PE5E4BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 27A. Continuous Drain Current3 ID Continuous Drain Current TA = 25 ° C TA = 70 ° C ID V A ° C / W mJ Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM UNITS TYPICAL VDS 30 SYMBOL IDM W1.7 EAS VGS LIMITS TC = 25 ° C ± 25 TA = 70 ° C THERMAL RESISTANCE Avalanche Energy L =0.1mH RqJC Drain-Source Voltage 9.5mΩ @VGS = 10V 31A Gate-Source Voltage IAS 22 ID Tc = 25 ° C 30V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) RqJA Pulsed Drain Current1 Power Dissipation PD TC = 100 ° C TJ, Tstg Steady-State Steady-State Junction-to-Ambient2 Junction-to-Case 1.1 TA = 25 ° C Avalanche Current REV 1.0 1 2016/12/16

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 2 2.3 ± 100 nA 14.3 17 7.5 9.5 28 S 530 160 2.7 Ω 6.7 1.5 4.3 15 A 1.2 V 15 nS 5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Zero Gate Voltage Drain Current IGSS IF = 10A, dlF/dt = 100A / mS UNITS Coss V(BR)DSS TEST CONDITIONS LIMITS nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd Ciss pF QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 10A, VGS = 0V nSVDS= 15V, ID @ 10A, VGS = 10V, RGEN= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Fall Time2 Gate Threshold Voltage VDS = 5V, ID = 10A VDS = 0V, VGS = ± 25V gfs Rise Time2 Turn-Off Delay Time2 Forward Transconductance1 IDSS VGS(th) VGS = 4.5V, ID = 8.8A Drain-Source Breakdown Voltage VDS = 15V , VGS = 10V, ID = 10A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Qg(VGS=10V) Crss Qg(VGS=4.5V) Total Gate Charge2 Rg VGS = 10V, ID = 10A VDS = 20V, VGS = 0V, TJ = 55 ° C SYMBOL Gate-Body Leakage VGS = 0V, ID = 250mA STATIC RDS(ON) V VDS = VGS, ID = 250mA Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance Drain-Source On-State Resistance1 REV 1.0 2 2016/12/16

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/12/16

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/16

N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/12/16

N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：L8） B. Tape&Reel Information:5000pcs/Reel REV 1.0 6 2016/12/16

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/12/16

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/12/16