PE5A0DZ UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 18A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 12.5 TC = 25 ° C W Junction-to-case RJC V Junction-to-Ambient3 TYPICAL 2.3 IAS 3.6 VGS UNITS 100 LIMITS IDM ° C / W mJ TA = 25 ° C TC = 100 ° C PD Operating Junction & Storage Temperature Range Avalanche Energy L = 0.1mH -55 to 150 RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 6mΩ @VGS = 4.5V 55A ID 20V SYMBOL VDS TA = 25 ° CContinuous Drain Current2 TC = 25 ° C TC = 100 ° C ID SYMBOL RJA TJ, Tstg Power Dissipation EAS MAXIMUM TA = 70 ° C THERMAL RESISTANCE A Pulsed Drain Current1 Avalanche Current REV 1.6 1 2018/6/12

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.4 0.7 1 ± 30 mA 3.5 5 6 3.7 5.2 7.2 4 5.6 7.8 4.3 5.8 8 5 8.7 12 43 S 2111 320 282 1.7 Ω 25.5 2.5 7.3 25.8 A 1.2 V 21 nS 8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 18A. STATIC LIMITSPARAMETER V IGSS VGS = 4.5V, ID = 3A mA DYNAMIC mΩ Gate Threshold Voltage Drain-Source Breakdown Voltage UNITS Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 10V, VGS = 0V , TJ = 125 ° C VDS = VGS, ID = 250mA pF VDS = 16V, VGS = 0V VGS = 1.8V, ID = 3A VGS(th) Forward Transconductance1 CissInput Capacitance nC Reverse Transfer Capacitance IF = 3A, VGS = 0V Fall Time2 Forward Voltage1 Qg(VGS=4.5V) VDS = 10V, ID = 3A Rg nS VGS = 0V, ID = 250mA gfs VDS = 5V, ID = 3A IDSS VDS = 0V, VGS = ± 8V VGS = 2.5V, ID = 3A V(BR)DSS VGS = 3.1V, ID = 3A Reverse Recovery Charge Continuous Current3 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Reverse Recovery Time IS VSD IF = 3A, dlF/dt = 100A / mS Total Gate Charge2 Qg(VGS=3.9V) VGS = 0V, VDS = 10V, f = 1MHzCoss Crss Gate Resistance Gate-Source Charge2 VDD = 15V ID @ 3A, VGEN = 4.5V, RG = 6Ω td(on) tr td(off) tf Qgd Qgs Qrr trr Drain-Source On-State Resistance1 RDS(ON) VGS = 3.8V, ID = 3A Output Capacitance Gate-Drain Charge2 SYMBOL VGS = 0V, VDS = 0V, f = 1MHz TEST CONDITIONS REV 1.6 2 2018/6/12

Dual N-Channel Enhancement Mode MOSFET REV 1.6 3 2018/6/12

Dual N-Channel Enhancement Mode MOSFET REV 1.6 4 2018/6/12

Dual N-Channel Enhancement Mode MOSFET REV 1.6 5 2018/6/12

Dual N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：H2) B. Tape&Reel Information:5000pcs/Reel REV 1.6 6 2018/6/12

Dual N-Channel Enhancement Mode MOSFET REV 1.6 7 2018/6/12

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.6 8 2018/6/12