PE552BA UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. 3Package limitation current is 22A. Continuous Drain Current3 TA = 25 ° C TA = 70 ° C ID V A 6.5 ° C / W mJ Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 20 SYMBOL IDM EAS MAXIMUM RqJC VGS LIMITS TC = 25 ° C THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C 20V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 5mΩ @VGS = 4.5V 47A Gate-Source Voltage ±8 TA = 70 ° C 1.3 TA = 25 ° C 74.6 Avalanche Current IAS 38.6 Junction-to-Ambient2 Junction-to-Case RqJA Pulsed Drain Current1 Power Dissipation PD TC = 100 ° C TJ, Tstg REV 1.0 1 2014/8/28
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.4 0.7 0.9 ± 100 nA 4.1 5 4.7 5.7 6 8.2 70 S 4407 469 381 0.7 Ω 180 14 A 1.3 V 24 nS 12 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Zero Gate Voltage Drain Current IGSS IF = 5A, dlF/dt = 100A / μS UNITS Coss VGS = 4.5V, ID = 5A STATIC Drain-Source Breakdown Voltage V VDS = 5V, ID = 5A VDS = 0V, VGS = ± 8V gfs V(BR)DSS TEST CONDITIONS Forward Transconductance1 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 16V, VGS = 0V Qgd Ciss pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 5A, VGS = 0V nSVDD= 4.5V, ID @ 5A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA LIMITS VGS=4.5V , VDS = 10V , ID = 5A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg Crss VGS = 1.8V, ID = 5A VDS = 10V, VGS = 0V, TJ = 55 ° C SYMBOL Gate-Body Leakage VGS(th) RDS(ON) VGS = 0V, ID = 250mA VGS = 2.5V, ID = 5A Input Capacitance VGS = 0V, VDS = 10V, f = 1MHz PARAMETER Output Capacitance REV 1.0 2 2014/8/28
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/8/28
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/8/28
N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/8/28