PE544JZ UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) SYMBOL VDS RDS(ON) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage 8.5mΩ @VGS = 4.5V 39A ID 20V UNITS LIMITS

20 VVGS

REV 1.2 1 2016/5/25 THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 24A. 3The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. MAXIMUM TA = 70 °C THERMAL RESISTANCE A Pulsed Drain Current1 Avalanche Current EAS SYMBOL RJA TJ, Tstg Power Dissipation TA = 25 °CContinuous Drain Current2 TC = 25 °C TC = 100 °C ID TA = 70 °C Gate-Source Voltage Avalanche Energy L = 0.1mH -55 to 150 IDM °C / W mJ TA = 25 °C TC = 100 °C PD Operating Junction & Storage Temperature Range 9.7 27.6 23.5 5.3 Junction-to-Ambient3 TYPICAL 1.4 IAS 2.2 GS 9.4 TC = 25 °C W Junction-to-case RJC REV 1.2 1 2016/5/25

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) MIN TYP MAX 0.35 0.67 1 ±30 uA 5.1 6.8 8.5 5.4 7.2 9 5.7 7.6 9.5 6.3 8.4 10.5 7 11 15 32 S 1589 SYMBOL TEST CONDITIONS Drain-Source On-State Resistance1 RDS(ON) VGS = 3.8V, ID = 3A VGS = 0V, ID = 250mA gfs VDS = 5V, ID = 3A IDSS VDS = 0V, VGS = ±8V VGS = 2.5V, ID = 3A V(BR)DSS VGS = 3.1V, ID = 3A Input Capacitance Zero Gate Voltage Drain Current Gate-Body Leakage VDS = 10V, VGS = 0V , TJ = 125 °C VDS = VGS, ID = 250mA VDS = 16V, VGS = 0V VGS = 1.8V, ID = 3A VGS(th) Forward Transconductance1 C VGS = 4.5V, ID = 3A mA DYNAMIC mΩ Gate Threshold Voltage Drain-Source Breakdown Voltage UNITS V IGSS STATIC LIMITSPARAMETER REV 1.2 2 2016/5/25 1589 214 165 2.3 Ω 18.5 1.7 4.5 1.8 A 1.2 V 24 nS 8 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 24A. VGS = 0V, VDS = 0V, f = 1MHz Qgs Qrr trr Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 VDD = 10V ID @ 3A, VGEN = 4.5V, RG = 6Ω td(on) tr td(off) tf Qgd Total Gate Charge2 Qg(VGS=3.8V) VGS = 0V, VDS = 10V, f = 1MHzCoss Crss Gate Resistance Reverse Recovery Charge Continuous Current3 Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C) Reverse Recovery Time IS VSD IF = 3A, dlF/dt = 100A / mS Input Capacitance nC Reverse Transfer Capacitance IF = 3A, VGS = 0V Fall Time2 Forward Voltage1 Qg(VGS=4.5V) VDS = 10V, ID = 3A Rg nS pF Ciss REV 1.2 2 2016/5/25

Dual N-Channel Enhancement Mode MOSFET REV 1.2 3 2016/5/25 REV 1.2 3 2016/5/25

Dual N-Channel Enhancement Mode MOSFET REV 1.2 4 2016/5/25 REV 1.2 4 2016/5/25

Dual N-Channel Enhancement Mode MOSFET REV 1.2 5 2016/5/25 REV 1.2 5 2016/5/25

Dual N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：L2) B. Tape&Reel Information:5000pcs/Reel REV 1.2 6 2016/5/25 REV 1.2 6 2016/5/25

Dual N-Channel Enhancement Mode MOSFET REV 1.2 7 2016/5/25 REV 1.2 7 2016/5/25

Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.2 8 2016/5/25 REV 1.2 8 2016/5/25