PE534SA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design 3Package limitation current is 26A. A V 3.5 ° C / W 100 mJ W Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 30 V SYMBOL IDM VGS LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current IAS 22 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C 30V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 7.5mΩ @VGS = 10V 52A Gate-Source Voltage ± 20 TA = 70 ° C 1.6 TC = 100 ° C TJ, Tstg RqJA TA= 70 ° C 11 TA = 25 ° C 2.5 TA = 25 ° C ID Pulsed Drain Current1 Continuous Drain Current3 Power Dissipation PD REV 1.0 1 2016/7/12

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.4 1.75 2.35 ± 100 nA 0.1 8.4 10.5 6.2 7.5 40 S 1075 215 155 1.8 Ω 22.5 11.7 3.3 5.3 7.2 18 30 A 0.6 V 11.5 nS 2.2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 26A. Zero Gate Voltage Drain Current IGSS IF = 10A, dlF/dt = 100A / μS UNITS Coss Drain-Source Breakdown Voltage V VGS = 4.5V, ID = 10A V(BR)DSS TEST CONDITIONS Ciss VDS = 5V, ID = 10A VDS = 0V, VGS = ± 20V gfs RDS(ON) Forward Transconductance1 STATIC nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 24V, VGS = 0V Qgd pF IDSS QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 1A, VGS = 0V nSVDD= 15V, ID @ 10A, VGEN = 10V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) LIMITS VDS = 15V , ID = 10A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=10V) Qg(VGS=4.5V) Crss Input Capacitance VGS = 0V, VDS = 15V, f = 1MHz PARAMETER Output Capacitance VGS = 10V , ID = 10A VDS = 20V, VGS = 0V, TJ = 125 ° C SYMBOL REV 1.0 2 2016/7/12

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N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/7/12

N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/7/12

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:5000pcs/Reel REV 1.0 6 2016/7/12

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/7/12

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/7/12