PE521BA UNIKC | Alldatasheet

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P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C.The value in any given application depends on the user's specific board design. 3Package limitation current is -11A. W V A TA = 25 ° C ID Pulsed Drain Current1 7 ° C / W 17.8 -23 -60 mJ IDM Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 IAS UNITS -18 TYPICAL VDS -20 SYMBOL VGS LIMITS TC = 25 ° C EAS MAXIMUM Avalanche Current -20 Junction-to-Case RqJC Junction-to-Ambient2 THERMAL RESISTANCE Avalanche Energy L =0.1mH ID Tc = 25 ° C -20V Tc = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 20mΩ @VGS = -4.5V -23A Gate-Source Voltage ±8 11.4 TA = 70 ° C 1.2 TA= 70 ° C -6 TA = 25 ° C 1.8 RqJA Continuous Drain Current3 Power Dissipation PD TC = 100 ° C TJ, Tstg REV 1.1 1 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.6 -1 ± 100 nA -10 14 20 17 25 22 35 21 S 1801 179 160 10 Ω 22.7 13.3 1.9 5.4 216 165 -16 A -1.2 V 35 nS 18 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -11A. Gate-Body Leakage VGS = -2.5V, ID = -2A Total Gate Charge2 Qg(VGS=-2.5V) Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = -250mA VGS = 0V, ID = -250mADrain-Source Breakdown Voltage IF = -2.5A, dlF/dt = 100A / μS UNITS VGS(th) V VGS = -4.5V, ID = -2.5A STATIC V(BR)DSS TEST CONDITIONS pF Ciss VDS = -5V, ID = -2.5A VDS = 0V, VGS = ± 8V gfs RDS(ON) Forward Transconductance1 Rise Time2 nC VGS = 0V, VDS = 0V, f = 1MHz Qgs uA DYNAMIC mΩ VDS = -16V, VGS = 0V Qgd Coss QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = -2.5A, VGS = 0V nSVDS= -10V, ID @ -2.5A, VGS = -4.5V, RGS= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = -10V, VGS = 0V, TJ = 125 ° C LIMITS VDS = -10V ,ID = -2.5A SYMBOL Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Qg(VGS=-4.5V) Crss VGS = -1.8V , ID = -1A IDSS Input Capacitance VGS = 0V, VDS = -10V, f = 1MHz PARAMETER Output Capacitance REV 1.1 2 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 3 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 4 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 5 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET A. Marking Information(此产品代码为：J9） B. Tape&Reel Information:5000pcs/Reel REV 1.1 6 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET REV 1.1 7 2017/11/6

P-Channel Logic Level Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2017/11/6