PD6D2BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 15A. Junction-to-Ambient RqJA ° C / W Junction & Storage Temperature Range SYMBOL °C-55 to 150 EAS THERMAL RESISTANCE TYPICAL PD IDM TC = 100 ° CPower Dissipation Tj, Tstg SYMBOL 8.4 mJ 9.6 62.5 Pulsed Drain Current1 Avalanche Current IAS L = 0.1mHAvalanche Energy TC = 25 ° C ID TC = 25 ° C 40V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 25mΩ @VGS = 10V 21A Gate-Source Voltage Drain-Source Voltage ± 20 LIMITS A VGS VDS V ID MAXIMUM W UNITS Junction-to-Case RqJC 5.2 REV 1.0 1 2016/12/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 3 ± 100 nA 20 35 18 25 32 S 431 3.9 Ω 5.4 1.2 3.1 18 A 1.3 V 9.6 nS 2.4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 15A. Forward Transconductance1 VGS = 4.5V, ID = 12A Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VGS = 0V, VDS = 20V, f = 1MHz Gate-Body Leakage STATIC PARAMETER SYMBOL Reverse Transfer Capacitance Ciss VDS = 5V, ID = 18A TEST CONDITIONS td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Reverse Recovery Time IF = 18A, VGS = 0V IS VSD trr IF = 18A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 Drain-Source Breakdown Voltage V UNITS V(BR)DSS LIMITS VGS = 0V, ID = 250mA pF RDS(ON) VGS = 10V , ID = 18A VDS = 30V, VGS = 0V , TJ = 125 ° C gfs mA DYNAMIC mΩ Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Drain-Source On-State Resistance1 Gate-Drain Charge2 Gate-Source Charge2 VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 32V, VGS = 0V VDS = 20V , ID = 18AQgs nSVDS = 20V , ID @ 18A, VGS = 10V, RGEN =6Ω Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Forward Voltage1 Total Gate Charge2 Qg(VGS=4.5V) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nC REV 1.0 2 2016/12/23

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/12/23

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/23

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2016/12/23

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2016/12/23

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/12/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/12/23