PD6B2BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% UIS Tested 100% Rg Tested TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 39A. Junction-to-Ambient RqJA Avalanche Current ° C / W Junction & Storage Temperature Range SYMBOL °C-55 to 150 EAS THERMAL RESISTANCE TYPICAL PD Pulsed Drain Current1 IDM TC = 100 ° CPower Dissipation Tj, Tstg TC = 100 ° C SYMBOL 31 mJ 62.5 IAS L = 0.1mHAvalanche Energy TC = 25 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 6.2mΩ @VGS = 10V 63A Gate-Source Voltage ID TC = 25 ° C 30V Continuous Drain Current2 Drain-Source Voltage ID Junction-to-Case RqJC ± 20 A VGS V MAXIMUM W UNITS 120 LIMITS VDS 2.6 REV 1.0 1 2017/1/4

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.6 2.3 ± 100 nA 5.7 9 4.7 6.2 75 S 992 189 122 2 Ω 2.3 7.2 40 A 1.2 V 11.5 nS 2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 39A. Forward Transconductance1 VGS = 4.5V, ID = 15A Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VGS = 0V, VDS = 15V, f = 1MHz Gate-Body Leakage Reverse Transfer Capacitance Ciss VDS = 5V, ID = 20A STATIC PARAMETER SYMBOL td(on) IDSS Coss Crss VDS = 24V, VGS = 0V TEST CONDITIONS VDS = 0V, VGS = ± 20V Continuous Current3 tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) Reverse Recovery Time IF = 20A, VGS = 0V IS VSD trr IF = 20A, dlF/dt = 100A / mSQrrReverse Recovery Charge Drain-Source Breakdown Voltage V VDS = 20V, VGS = 0V , TJ = 125 ° C gfs Qg(VGS=10V) Drain-Source On-State Resistance1 Gate-Drain Charge2 Gate-Source Charge2 UNITS V(BR)DSS LIMITS VGS = 0V, ID = 250mA pF Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz mA DYNAMIC mΩ Input Capacitance Output Capacitance RDS(ON) VGS = 10V , ID = 20A Forward Voltage1 Total Gate Charge2 Qg(VGS=4.5V) SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nCVDS = 15V , ID = 20AQgs nSVDS = 15V , ID @ 20A, VGS = 10V, RGEN = 6Ω Qgd REV 1.0 2 2017/1/4

N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/4

N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/4

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/4

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/4

N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/4

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/4