PD6A8BA UNIKC | Alldatasheet
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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 55A. V °C-55 to 150 MAXIMUM Junction-to-Case 1.7 ° C / W IDM SYMBOL LIMITS A VGS VDS SYMBOL W UNITS 120 61.2 mJ ± 20 Drain-Source Voltage TC = 25 ° C ID TC = 25 ° C 40V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 6.2mΩ @VGS = 10V 75A Gate-Source Voltage IAS 35 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TC = 100 ° C 62.5 Junction & Storage Temperature Range L =0.1mH ID PD RqJC Pulsed Drain Current1 Avalanche Current Power Dissipation Tj, Tstg Junction-to-Ambient RqJA REV 1.0 1 2014/10/14
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.70 2.3 ± 100 nA 5.5 8 4.9 6.2 85 S 2181 261 152 1.4 Ω 5.7 56 A 1.3 V 16 nS 5 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 55A. VDS = 20V , ID =20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance IF = 20A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 20V, f = 1MHz Qg(VGS=4.5V) Rg pF STATIC Drain-Source Breakdown Voltage V nCQgs mA DYNAMIC VDS = 32V, VGS = 0V QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 20A, VGS = 0V nSVDS = 20V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS gfs Ciss VDS =5V, ID = 20A Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Forward Transconductance1 Total Gate Charge2 Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 30V, VGS = 0V, TJ = 125 ° C PARAMETER mΩ VGS = 4.5V, ID = 15A SYMBOL UNITS Zero Gate Voltage Drain Current IGSSGate-Body Leakage VGS(th) VGS = 10V, ID = 20A Drain-Source On-State Resistance1 RDS(ON) REV 1.0 2 2014/10/14
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/10/14
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/10/14
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/10/14