PD6A4BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. L = 0.1mHAvalanche Energy Junction-to-Case RqJC 1.3 LIMITS A VGS VDS V MAXIMUM W UNITS 20 mJ ± 20 Drain-Source Voltage ID TC = 25 ° C 40V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 12mΩ @VGS = 10V 35A SYMBOL Pulsed Drain Current1 Avalanche Current IAS ID EAS THERMAL RESISTANCE TYPICAL PD TC = 25 ° C 32 Gate-Source Voltage 62.5 IDM TC = 100 ° CPower Dissipation Tj, Tstg ° C / W Junction & Storage Temperature Range SYMBOL °C-55 to 150 Junction-to-Ambient RqJA REV 1.0 1 2016/12/20

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.78 2.3 ± 100 nA 12 16 10 12 75 S 843 106 2.4 Ω 17.2 9.5 2.7 2.7 4.5 6.3 24 A 1.3 V 11.8 nS 3.4 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 30A. Drain-Source On-State Resistance1 RDS(ON) VGS = 10V , ID = 20A nSVDS = 20V , ID @ 20A, VGS = 10V, RGEN =6Ω Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Forward Voltage1 Total Gate Charge2 Qg(VGS=4.5V) VDS = 0V, VGS = ± 20V IDSS Coss Crss VDS = 32V, VGS = 0V VDS = 20V , ID = 20A pF nCQgs mA DYNAMIC mΩ Drain-Source Breakdown Voltage V UNITS V(BR)DSS LIMITS VGS = 0V, ID = 250mA Reverse Recovery Time IF = 20A, VGS = 0V IS VSD trr IF = 20A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 STATIC Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS = 5V, ID = 20Agfs TEST CONDITIONS VGS(th) Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 30V, VGS = 0V , TJ = 125 ° C PARAMETER SYMBOL VGS = 0V, VDS = 20V, f = 1MHz Gate-Body Leakage Forward Transconductance1 VGS = 4.5V, ID = 15A REV 1.0 2 2016/12/20

N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/12/20

N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/12/20

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2016/12/20

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2016/12/20

N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/12/20

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/12/20