PD648BA UNIKC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2 Package limitation current is 55A. Power Dissipation Tj, Tstg 62.5 Junction-to-Ambient RqJA L =0.1mH ID PD RqJC Pulsed Drain Current1 Avalanche Current IAS 36 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TC = 100 ° C ID TC = 25 ° C 30V Continuous Drain Current2 TC = 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 3.9mΩ @VGS = 10V 94A Gate-Source Voltage Drain-Source Voltage TC = 25 ° C V W UNITS 170 64 mJ ± 20 62.5 ° C / W IDM SYMBOL LIMITS A VVGS VDS Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM Junction-to-Case 2 REV 1.0 1 2014-3-4
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 3.9 5.2 3 3.9 80 S 2010 325 205 1.1 Ω 41.3 21.5 6.2 48 A 1.3 V 32 nS 23 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3 Package limitation current is 55A. Gate-Body Leakage VGS(th) VGS = 10V, ID = 20A Drain-Source On-State Resistance1 RDS(ON) mΩ VGS = 4.5V, ID = 15A SYMBOL UNITS Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 20V, VGS = 0V, TJ = 125 ° C PARAMETER Ciss VDS =5V, ID = 20A Input Capacitance Qgd Output Capacitance Qg(VGS=10V) Forward Transconductance1 gfs td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS IS VSD trr IF = 20A, VGS = 0V nSVDS = 15V, ID @ 20A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs mA DYNAMIC VDS = 24V, VGS = 0V QrrDiode Reverse Recovery Charge Continuous Current3 Forward Voltage1 Diode Reverse Recovery Time pF STATIC Drain-Source Breakdown Voltage V IF = 20A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA VGS = 0V, VDS = 15V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V) Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz VDS = 15V , ID =20A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance REV 1.0 2 2014-3-4
N-Channel Enhancement Mode MOSFET REV 1.0 3 2014-3-4
N-Channel Enhancement Mode MOSFET REV 1.0 4 2014-3-4
N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014-3-4