PD636BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100% RG Test 100% UIL Test TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 20A. ° C / WRqJA 62.5 Junction-to-Case RqJC Gate-Source Voltage ID IAS Pulsed Drain Current1 9mΩ @VGS = 10V 48A Drain-Source Voltage EAS THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range SYMBOL Power Dissipation Tj, Tstg ID TC= 25 ° C 30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) W TYPICAL PD LIMITS 120 30.5 20.8 mJ A Junction-to-Ambient VDS V UNITS ± 20 37.9 IDM SYMBOL °C-55 to 150 MAXIMUM VVGS TC= 25 ° C Avalanche Current 3.3 Avalanche Energy L=0.1mH REV 1.1 1 2018/5/24

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 10 12 7 9 45 S 765 143 3 Ω 16.5 8.9 2.2 48 A 1.2 V 21 nS 9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 20A. UNITSSYMBOL Input Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Body Leakage TEST CONDITIONSPARAMETER Output Capacitance Qg(VGS=10V) DYNAMIC nC VDS =24V, VGS = 0V VDS =5V, ID =20A mΩ gfs Fall Time2 VSD nS VDS = 15V , ID @ 20A, VGS=10V, RGEN=6Ω td(on) td(off) Ciss QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time V(BR)DSS tf Qgs Rg Qgd trr IF = 20A, VGS = 0V VGS = 0V, ID = 250mA IS pF VDS =15V, ID = 20A tr Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 VGS = 0V, VDS = 15V, f = 1MHz V VGS =4.5V, ID =15A mA IF = 20A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID =20A Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz STATIC REV 1.1 2 2018/5/24

N-Channel Enhancement Mode MOSFET REV 1.1 3 2018/5/24

N-Channel Enhancement Mode MOSFET REV 1.1 4 2018/5/24

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2018/5/24

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.1 6 2018/5/24

N-Channel Enhancement Mode MOSFET REV 1.1 7 2018/5/24

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/5/24