PD632BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 55A. Avalanche Energy L=0.1mH °C-55 to 150 MAXIMUM VVGS VDS V UNITS ± 20 IDM SYMBOL 105 LIMITS 200 80 mJ A Junction-to-Ambient W TYPICAL PD TC= 25 ° C Power Dissipation Tj, Tstg ID TC= 25 ° C 30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 3.7mΩ @VGS = 10V 105A Drain-Source Voltage EAS THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range SYMBOL Gate-Source Voltage ID IAS Pulsed Drain Current1 Avalanche Current 1.7 ° C / WRqJA 62.5 Junction-to-Case RqJC REV 1.1 1 2015/11/19

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.3 ± 100 nA 3.4 4.8 2.8 3.7 80 S 2189 390 234 1.4 Ω 44.2 23.1 5.6 10.7 105 A 1 V 25 nS 11 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 55A. Total Gate Charge2 Qg(VGS=4.5V) Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID =20A Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz STATIC IF = 20A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C VGS =4.5V, ID =15A V Turn-Off Delay Time2 VGS = 0V, VDS = 15V, f = 1MHz mA tr Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Turn-On Delay Time2 Rise Time2 trr IF = 20A, VGS = 0V VGS = 0V, ID = 250mA IS pF VDS =15V, ID = 20A QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time V(BR)DSS tf Qgs Rg Qgd VSD nS VDS = 15V ,ID @ 20A, VGS=10V,RGEN=6Ω td(on) td(off) Ciss Fall Time2 gfs Gate-Body Leakage TEST CONDITIONSPARAMETER Output Capacitance Qg(VGS=10V) DYNAMIC nC VDS =24V, VGS = 0V VDS =5V, ID =20A mΩ Input Capacitance Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA UNITSSYMBOL REV 1.1 2 2015/11/19

N-Channel Enhancement Mode MOSFET REV 1.1 3 2015/11/19

N-Channel Enhancement Mode MOSFET REV 1.1 4 2015/11/19

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.1 5 2015/11/19

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.1 6 2015/11/19

N-Channel Enhancement Mode MOSFET REV 1.1 7 2015/11/19

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2015/11/19