PD628BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. ° C / WRqJA 62.5 Junction-to-Case RqJC Gate-Source Voltage ID IAS Pulsed Drain Current1 Drain-Source Voltage EAS THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range SYMBOL ID TC= 25 ° C 30V Continuous Drain Current TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 14mΩ @VGS = 10V 27A W TYPICAL PD LIMITS VDS SYMBOL 100 11.3 mJ A Junction-to-Ambient IDM V UNITS ± 20 °C-55 to 150 MAXIMUM VVGS TC= 25 ° C Avalanche Current Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg REV 1.0 1 2015/9/23

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 14 20 10 14 29 S 446 4 Ω 9.3 1.1 2.9 18 A 1 V 9.6 nS 2.7 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. UNITSSYMBOL Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA PARAMETER Output Capacitance Qg(VGS=10V) DYNAMIC nC VDS =24V, VGS = 0V VDS =5V, ID =8A mΩ Input Capacitance Drain-Source Breakdown Voltage gfs Gate-Body Leakage TEST CONDITIONS Fall Time2 VSD nSVDS = 15V , ID @ 8A, VGS=10V, RGEN=6Ω td(on) td(off) Ciss tr Qg(VGS=4.5V) QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time V(BR)DSS tf Qgs Rg Qgd trr IF = 8A, VGS = 0V VGS = 0V, ID = 250mA IS pF VDS =15V, ID = 8A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Turn-On Delay Time2 Rise Time2 VGS =4.5V, ID =6A Total Gate Charge2 Turn-Off Delay Time2 VGS = 0V, VDS = 15V, f = 1MHz V mA IF = 8A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID =8A Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz STATIC REV 1.0 2 2015/9/23

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/9/23

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/9/23

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/9/23

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2015/9/23

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/9/23

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/9/23