PD616BA UNIKC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 30A. 3.3 MAXIMUM W UNITS 120 LIMITS VDS Junction-to-Case RqJC ± 20 A VGS V ID Drain-Source Voltage PARAMETERS/TEST CONDITIONS RDS(ON) 7mΩ @VGS = 10V 55A Gate-Source Voltage ID TC = 25 ° C 30V Continuous Drain Current2 IAS L = 0.1mHAvalanche Energy TC = 25 ° C TC = 100 ° C SYMBOL 27 mJ 62.5 Pulsed Drain Current1 IDM TC = 100 ° CPower Dissipation Tj, Tstg Avalanche Current ° C / W Junction & Storage Temperature Range SYMBOL °C-55 to 150 EAS THERMAL RESISTANCE TYPICAL PD Junction-to-Ambient RqJA REV 1.0 1 2017/1/12
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.35 1.7 3 ± 100 nA 7 9.5 5.6 7 50 S 821 159 2.2 Ω 17.2 9.2 1.9 5.2 55 A 1.2 V 8.6 nS 1.7 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. 3Package limitation current is 30A Qg(VGS=4.5V) Forward Voltage1 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) nCVDS = 15V , ID = 20AQgs nSVDS = 15V , ID @ 20A, VGS = 10V, RGEN = 6Ω Qgd Total Gate Charge2 Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz mA DYNAMIC mΩ Input Capacitance Output Capacitance RDS(ON) VGS = 10V , ID = 20A Qg(VGS=10V) Drain-Source On-State Resistance1 Gate-Drain Charge2 Gate-Source Charge2 UNITS V(BR)DSS LIMITS VGS = 0V, ID = 250mA pF VDS = 20V, VGS = 0V , TJ = 125 ° C gfs Drain-Source Breakdown Voltage V Reverse Recovery Time IF = 20A, VGS = 0V IS VSD trr IF = 20A, dlF/dt = 100A / mSQrrReverse Recovery Charge Continuous Current3 tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 VGS(th) VDS = 0V, VGS = ± 20V td(on) IDSS Coss Crss VDS = 24V, VGS = 0V TEST CONDITIONS STATIC PARAMETER SYMBOL VGS = 0V, VDS = 15V, f = 1MHz Gate-Body Leakage Reverse Transfer Capacitance Ciss VDS = 5V, ID = 20AForward Transconductance1 VGS = 4.5V, ID = 15A Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA REV 1.0 2 2017/1/12
N-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/12
N-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/12
N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/12
N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/12
N-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/12
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/12