PD600BA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 28A VVGS TC= 25 ° C Avalanche Current 3.8 Avalanche Energy L=0.1mH Power Dissipation Tj, Tstg V UNITS ± 20 °C-55 to 150 MAXIMUM 120 20 mJ A Junction-to-Ambient IDM LIMITS VDS SYMBOL W TYPICAL PD ID TC= 25 ° C 30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 9.5mΩ @VGS = 10V 42A Drain-Source Voltage EAS THERMAL RESISTANCE TC= 100° C Junction & Storage Temperature Range SYMBOL Gate-Source Voltage ID IAS Pulsed Drain Current1 ° C / WRqJA 62.5 Junction-to-Case RqJC REV 1.0 1 2015/12/4

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.8 2.3 ± 100 nA 9.6 13.5 7.3 9.5 63 S 617 120 2.5 Ω 1.5 3.7 29 A 1.1 V 10 nS 3 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 28A. VGS =10V, ID =20A Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz STATIC IF = 20A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 125° C mA V Turn-Off Delay Time2 VGS = 0V, VDS = 15V, f = 1MHz Reverse Transfer Capacitance Turn-On Delay Time2 Rise Time2 VGS =4.5V, ID =15A Total Gate Charge2 Drain-Source On-State Resistance1 RDS(ON) trr IF = 20A, VGS = 0V VGS = 0V, ID = 250mA IS pF VGS = 10V, VDS =15V, ID = 20A QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time V(BR)DSS tf Qgs Rg Qgd VSD nSVDS = 15V , ID @ 20A, VGS= 10V, RGEN= 6Ω td(on) td(off) Ciss tr Fall Time2 gfs Gate-Body Leakage TEST CONDITIONS Output Capacitance Qg DYNAMIC nC VDS =24V, VGS = 0V VDS =5V, ID =20A mΩ Input Capacitance Gate-Drain Charge2 Gate-Source Charge2 Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA PARAMETER Drain-Source Breakdown Voltage UNITSSYMBOL REV 1.0 2 2015/12/4

N-Channel Enhancement Mode MOSFET REV 1.0 3 2015/12/4

N-Channel Enhancement Mode MOSFET REV 1.0 4 2015/12/4

N-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/12/4

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2015/12/4

N-Channel Enhancement Mode MOSFET REV 1.0 7 2015/12/4

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2015/12/4