PD551BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is -30A. SYMBOL -35 LIMITS VVGS ID V UNITS -100 -22 -30 ± 25 VDS A TC= 25 ° C RqJA RDS(ON) Junction-to-Ambient TYPICA L ID TC= 25 ° C -30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS 20mΩ @VGS = -10V -35A Drain-Source Voltage Pulsed Drain Current1 Gate-Source Voltage MAXIMUMTHERMAL RESISTANCE IDM Avalanche Current IAS -26.5 TC= 100° C Junction & Storage Temperature Range Power Dissipation Tj, Tstg -55 to 150 PD Avalanche Energy L = 0.1mH EAS 35 mJ 62.5 ° C / W SYMBOL W18 2.7Junction-to-Case RqJC REV 1.0 1 2017/1/13

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.5 -3 ± 100 nA -10 16 20 23 30 21 S 1150 154 120 7.5 Ω 5.3 -35 A -1.3 V 14 nS 5 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -30A. UNITS IF = -10A, dlF/dt = 100A /mS VDS = 0V, VGS = ± 25V IDSS Coss Crss td(off) IS trr Rg mΩ IF = -10A, VGS = 0V Turn-Off Delay Time2 Gate-Drain Charge2 VDS =-15V ,ID @ -10A, VGS=-10V,RGEN=6Ω td(on) V(BR)DSS Gate Threshold Voltage STATIC nS VDS = VGS, ID = -250mA VGS = 0V, ID = -250mA nC Qg(VGS=-4.5V) Ciss V Qgd tr pF Turn-On Delay Time2 Drain-Source On-State Resistance1 RDS(ON) VGS =0V, VDS = 0V, f = 1MHz QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time Fall Time2 tf VSD SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Rise Time2 QgsGate-Source Charge2 Reverse Transfer Capacitance Qg(VGS=-10V) Input Capacitance Total Gate Charge2 VDS =-15V, ID = -10A Gate Resistance VGS = 0V, VDS = -15V, f = 1MHz SYMBOL Output Capacitance DYNAMIC VGS = -4.5V, ID = -10A VDS =-24V, VGS = 0V mA VGS(th) PARAMETER Zero Gate Voltage Drain Current gfs LIMITS Gate-Body Leakage Drain-Source Breakdown Voltage IGSS VDS = -5V, ID = -10A TEST CONDITIONS Forward Transconductance1 VDS =-30V, VGS = 0V, TJ = 125° C VGS = -10V, ID = -10A REV 1.0 2 2017/1/13

P-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/13

P-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/13

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/13

P-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/13

P-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/13

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/13