PD533BA

PD533BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is -40A. 1.9 Avalanche Energy L = 0.1mH EAS 72.2 mJ 62.5 ° C / W IDM Avalanche Current IAS -38 TC= 100° C Junction & Storage Temperature Range SYMBOL W Junction-to-Case RqJC Power Dissipation Tj, Tstg MAXIMUM -55 to 150 °C PD 14mΩ @VGS = -10V -51A Drain-Source Voltage Pulsed Drain Current1 Gate-Source Voltage THERMAL RESISTANCE TYPICA L ID TC= 25 ° C -40V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Junction-to-Ambient TC= 25 ° C RqJA ID V UNITS -150 -40 -40 ± 25 A SYMBOL -51 LIMITS VVGS VDS REV 1.0 1 2015/4/9

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -40 -1 -1.8 -3 ± 100 nA -10 14 20 10 14 50 S 2670 313 222 4.5 Ω -50 A -1.3 V 17 nS 6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -40A. VDS = -5V, ID = -20A TEST CONDITIONS Gate-Body Leakage Forward Transconductance1 VDS = -30V, VGS = 0V, TJ = 125° C VGS =-4.5V, ID =-15A VGS(th) VGS = 0V, VDS = -20V, f = 1MHz SYMBOL Output Capacitance DYNAMIC Qgs pF Gate-Source Charge2 Reverse Transfer Capacitance Qg(VGS =-10V) Input Capacitance Total Gate Charge2 gfs Rise Time2 Qgd VDS = -20V,ID = -20A VDS = -32V, VGS = 0V VGS =-10V, ID =-20A Fall Time2 tr Turn-On Delay Time2 Drain-Source On-State Resistance1 RDS(ON) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time tf VSD nS VDS = VGS, ID = -250mA VGS = 0V, ID = -250mA nC Qg(VGS =-4.5V) Ciss Turn-Off Delay Time2 Gate-Drain Charge2 VDS = -20V ,ID @ -20A, VGS= -10V,RGEN= 6Ω td(on) V(BR)DSS Gate Threshold Voltage Gate Resistance VGS =0V, VDS = 0V, f = 1MHz SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) mA mΩ IF = -20A, VGS = 0V IF = -20A, dlF/dt = 100A /mS VDS = 0V, VGS = ± 25V IDSS Coss Crss td(off) IS trr Rg PARAMETER Zero Gate Voltage Drain Current IGSS STATIC Drain-Source Breakdown Voltage V LIMITS UNITS REV 1.0 2 2015/4/9

P-Channel Enhancement Mode MOSFET REV 1.0 3 2015/4/9

P-Channel Enhancement Mode MOSFET REV 1.0 4 2015/4/9

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2015/4/9