PD517BA

PD517BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is 40A. Avalanche Energy L = 0.1mH EAS 72 mJ IDM Avalanche Current IAS -38 TC= 100° C Junction & Storage Temperature Range SYMBOL W25 -55 to 150 °C Junction-to-Case RqJC 62Power Dissipation Tj, Tstg MAXIMUM 62.5 ° C / W PD 12mΩ @VGS = -10V -55A Drain-Source Voltage Pulsed Drain Current1 Gate-Source Voltage THERMAL RESISTANCE TYPICA L ID TC= 25 ° C -30V Continuous Drain Current2 TC= 100 ° C PARAMETERS/TEST CONDITIONS RDS(ON) Junction-to-Ambient TC= 25 ° C RqJA VDS ID V UNITS -150 -35 -30 ± 20 A SYMBOL -55 LIMITS VVGS REV 1.0 1 2014/5/19

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1 -1.7 -3 ± 100 nA -10 15.4 19 9.8 12 31 S 2740 376 321 2.6 Ω 8.7 -51 A -1.2 V 20 nS 12 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is 40A. VDS = -5V, ID = -12A TEST CONDITIONS UNITS Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =-20V, VGS = 0V, TJ = 125° C VGS =-4.5V, ID =-9A gfs VGS = 0V, VDS = -15V, f = 1MHz SYMBOL Output Capacitance DYNAMIC VDS =-24V, VGS = 0V VGS =-10V, ID =-12A Qgs pF Gate-Source Charge2 Reverse Transfer Capacitance Qg(VGS = 10V) Input Capacitance Total Gate Charge2 Qg(VGS =4.5V) Ciss Rise Time2 Qgd VDS =-15V,VGS =-10V, ID = -12A Fall Time2 tr Turn-On Delay Time2 Drain-Source On-State Resistance1 RDS(ON) QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time tf VSD nS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA nC Turn-Off Delay Time2 Gate-Drain Charge2 VDS =-15V ,ID @ -12A, VGS=-10V,RGEN=6Ω td(on) LIMITS SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) mA mΩ IF = -12A, VGS = 0V V(BR)DSS IF = -12A, dlF/dt = 100A /mS VDS = 0V, VGS = ± 20V IDSS Coss Crss td(off) IS trr Gate Threshold Voltage Gate Resistance Rg VGS =0V, VDS = 0V, f = 1MHz PARAMETER Zero Gate Voltage Drain Current IGSS STATIC Drain-Source Breakdown Voltage V REV 1.0 2 2014/5/19

P-Channel Enhancement Mode MOSFET REV 1.0 3 2014/5/19

P-Channel Enhancement Mode MOSFET REV 1.0 4 2014/5/19

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2014/5/19