PD515BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 8

Technical content

P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature. 2Package limitation current is -10A. SYMBOL -15 LIMITS VVGS VDS ID V UNITS -30 -9.8 -20 A TC= 25 ° C RqJA RDS(ON) Junction-to-Ambient TYPICA L ID TC= 25 ° C -20V Continuous Drain Current3 TC= 100 ° C PARAMETERS/TEST CONDITIONS 65mΩ @VGS = -4.5V -15A Drain-Source Voltage Pulsed Drain Current1 Gate-Source Voltage MAXIMUMTHERMAL RESISTANCE RqJC IDM Avalanche Current IAS -11 TC= 100° C Junction & Storage Temperature Range Power Dissipation Tj, Tstg -55 to 150 PD Avalanche Energy L = 0.1mH EAS 6 mJ 62.5 ° C / W SYMBOL W10 5Junction-to-Case REV 1.0 1 2017/1/12

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -20 -0.3 -0.7 -1 ± 100 nA -10 50 65 63 85 82 120 11 S 576 8 Ω 6.7 0.8 1.8 -20 A -1.2 V 7 nS 1 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. 3Package limitation current is -10A. UNITS IF = -2.5A, dlF/dt = 100A /mS VDS = 0V, VGS = ± 8V IDSS Coss Crss td(off) VGS =-2.5V, ID =-2A IS trr Rg mΩ IF = -2.5A, VGS = 0V STATIC Drain-Source Breakdown Voltage SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Turn-Off Delay Time2 Gate-Drain Charge2 VDS =-10V ,ID @ -2.5A, VGS=-4.5V,RGEN=6Ω td(on) V(BR)DSS Gate Threshold Voltage nS VDS = VGS, ID = -250mA VGS = 0V, ID = -250mA nC Qg(VGS = -2.5V) Ciss V Turn-On Delay Time2 Drain-Source On-State Resistance1 RDS(ON) VGS =0V, VDS = 0V, f = 1MHz Qgd QrrReverse Recovery Charge Continuous Current3 Forward Voltage1 Reverse Recovery Time Fall Time2 tr tf VSD Rise Time2 Qgs pF Gate-Source Charge2 Reverse Transfer Capacitance Qg(VGS = -4.5V) Input Capacitance Total Gate Charge2 VDS =-10V, ID = -2.5A Gate Resistance VGS = 0V, VDS = -10V, f = 1MHz SYMBOL Output Capacitance DYNAMIC VGS =-1.8V, ID =-1A VDS =-16V, VGS = 0V mA VGS(th) PARAMETER Zero Gate Voltage Drain Current gfs LIMITS IGSSGate-Body Leakage VDS = -5V, ID = -2.5A TEST CONDITIONS Forward Transconductance1 VDS =-10V, VGS = 0V, TJ = 125° C VGS =-4.5V, ID =-2.5A REV 1.0 2 2017/1/12

P-Channel Enhancement Mode MOSFET REV 1.0 3 2017/1/12

P-Channel Enhancement Mode MOSFET REV 1.0 4 2017/1/12

P-Channel Enhancement Mode MOSFET *因为各家封装模具不同而外观略有所差异，不影响电性及Layout。 REV 1.0 5 2017/1/12

P-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel REV 1.0 6 2017/1/12

P-Channel Enhancement Mode MOSFET REV 1.0 7 2017/1/12

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2017/1/12