PD1503YVS

PD1503YVS UNIKC | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 8

Technical content

Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS Q2 30V Q1 30V ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) UNITS mJ ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) UNITS mA V THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed VDS ID RDS(ON) 15.8mΩ @VGS = 10V 21.0mΩ @VGS = 10V SOP- 08 SYMBOLPARAMETERS/TEST CONDITIONS THERMAL RESISTANCE RqJA TYPICALSYMBOL VGS -55 to 150 MAXIMUM 62.5 TA = 25 ° C 1.28 VF 0.45 SYMBOL Schottky Junction-to-Ambient Power Dissipation Operating Junction & Storage Temperature Range PD Forward Voltage V A ± 20 Reverse Current VR = 25V IR 0.05 ± 20 TA = 70 ° C Avalanche Current IF = 1A PARAMETERS/TEST CONDITIONS TA = 70 ° C Continuous Drain Current2 Pulsed Drain Current1 , 2 IAS IDM Avalanche Energy ID TA = 25 ° C Drain-Source Voltage Gate-Source Voltage L = 0.1mH EAS TJ, TSTG Ver 1.0 1 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Q2 ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 1.7 3 ± 100 nA 35 A 14.2 20 10.5 15.8 25 S 1040 295 139 1.5 Ω 3.8 4.3 2.8 V 0.7 V 15 nS 6 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) VDD = 15V, ID = 1A, VGS = 10V, RG=6Ω nSRise Time2 tr Turn-On Delay Time2 mA VDS = 0V, VGS = ± 20V Forward Transconductance1 gfs VDS = 5V, ID = 9A On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V Drain-Source On-State Resistance1 mΩ Gate-Source Charge2 Qgs Gate-Drain Charge2 Qgd VGS = 4.5V, ID = 7A Gate Threshold Voltage Drain-Source Breakdown Voltage VDS = 20V, VGS = 0V , TJ = 125 ° C VDS = 24V, VGS = 0V Output Capacitance Coss Reverse Transfer Capacitance Crss STATIC Input Capacitance Ciss VGS = 0V, VDS = 15V, f = 1MHz DYNAMIC LIMITSTEST CONDITIONSPARAMETER SYMBOL IF = 9A, VGS = 0V V(BR)DSS nC VGS = 0V, ID = 250mA VGS(th) IGSS VDS = VGS, ID = 250mA Reverse Recovery Time trr IF = 9A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr Fall Time2 tf Forward Voltage1 Continuous Current IS VSD Turn-Off Delay Time2 td(off) Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = 9A, VGS = 10V pF VGS = 10V, ID = 9ARDS(ON) V UNIT Ver 1.0 2 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Q1 ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1 2 3 ± 100 nA 30 A 25.6 32 15.8 21 15 S 560 160 2 Ω 2.5 3.1 2 V 1 V 20 nS 12 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. nSRise Time2 tr Turn-Off Delay Time2 td(off) Fall Time2 tf Reverse Recovery Time trr IF = 7A, dlF/dt = 100A / mS Reverse Recovery Charge Qrr Turn-On Delay Time2 td(on) VDD = 15V, ID = 1A, VGS = 10V,RG=6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) Continuous Current IS Forward Voltage1 VSD IF = 7A, VGS = 0V VDS = 5V, ID = 7A DYNAMIC Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz VGS = 0V, VDS = 15V, f = 1MHz pFOutput Capacitance Coss Reverse Transfer Capacitance nCGate-Source Charge2 Qgs Gate-Drain Charge2 Qgd Total Gate Charge2 Qg VDS = 0.5V(BR)DSS, ID = 7A, VGS = 10V Crss ID(ON) Drain-Source On-State Resistance1 RDS(ON) Input Capacitance Ciss Forward Transconductance1 gfs Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V mΩVGS = 10V, ID = 7A VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A mAVDS = 20V, VGS = 0V , TJ = 125 ° C PARAMETER Gate-Body Leakage IGSS VDS = 0V, VGS = ± 20V SYMBOL TEST CONDITIONS LIMITS UNIT STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250mA VGate Threshold Voltage VGS(th) VDS = VGS, ID = 250mA On-State Drain Current1 Ver 1.0 3 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Ver 1.0 4 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Ver 1.0 5 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Ver 1.0 6 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Ver 1.0 7 2012/4/12

Dual N-Channel Enhancement Mode MOSFET Ver 1.0 8 2012/4/12