PC561BA UNIKC | Alldatasheet

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P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS 1Pulse width limited by maximum junction temperature.

2 The value of RqJA

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. 3The Power dissipation is based on RqJA t ≦10s value. t ≦10sJunction-to-Ambient2 Junction-to-Ambient2 Steady-State RqJA THERMAL RESISTANCE SYMBOL PD TJ, TSTG TA = 25 ° C Operating Junction & Storage Temperature Range TYPICAL 1.6 2.5 MAXIMUM Power Dissipation3 TA = 70 ° C SYMBOL LIMITS IAS Pulsed Drain Current1 -12Avalanche Current EAS RDS(ON) TA = 70 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 45mΩ @VGS = -10V -5.7A ID -30V ID IDM Continuous Drain Current Avalanche Energy RqJA VGS -5.7TA = 25 ° C L = 0.1mH V A RqJC UNITS -20 -4.5 ± 20 °C-55 to 150 mJ W Steady-StateJunction-to-Case 18 ° C / W REV 1.0 1 2016/5/31

P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX -30 -1.3 -1.6 -2.3 ± 100 nA -10 46 85 32 45 10 S 585 1.5 3.3 -2 A -1.1 V 10 nS 2 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Time IF = -4A, dlF/dt = 100A / mS VSD Fall Time2 Forward Voltage1 TEST CONDITIONS mΩDrain-Source On-State Resistance1 RDS(ON) VGS = -10V, ID = -4A VDS = -20V, VGS = 0V , TJ = 55 ° C nSVDD = -15V, VGS = -10V ID @ -4A, RGS = 6Ω td(on) tr td(off) tf Output Capacitance Gate-Drain Charge2 Gate-Source Charge2 QrrReverse Recovery Charge Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) IF = -4A, VGS = 0V IS VGS = 0V, VDS = -15V, f = 1MHz Reverse Transfer Capacitance trr Drain-Source Breakdown Voltage VGS = -4.5V, ID = -4A VDS = -5V, ID = -4A VGS(th) Forward Transconductance1 VGS = 0V, ID = -250mAV(BR)DSS Qg(VGS= -4.5V) Ciss Coss Crss Qgd Qgs gfs Gate Threshold Voltage DYNAMIC V IGSS pF VDS = -24V, VGS = 0V Gate-Body Leakage Input Capacitance IDSS VDS = VGS, ID = -250mA VDS = 0V, VGS = ± 20V Zero Gate Voltage Drain Current STATIC LIMITS UNITSPARAMETER SYMBOL Total Gate Charge2 VDS = -15V , VGS =-10V, ID = -4A nC Qg(VGS= -10V) mA REV 1.0 2 2016/5/31

P-Channel Enhancement Mode MOSFET REV 1.0 3 2016/5/31

P-Channel Enhancement Mode MOSFET REV 1.0 4 2016/5/31

P-Channel Enhancement Mode MOSFET REV 1.0 5 2016/5/31

P-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:1000pcs/Reel REV 1.0 6 2016/5/31

P-Channel Enhancement Mode MOSFET REV 1.0 7 2016/5/31

P-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/5/31