PC015HV UNIKC | Alldatasheet

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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature.

2 The value of RqJA

is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25° C. SOP-8 Power Dissipation Tj, Tstg 1.8 Junction-to-Ambient2 RqJA L =0.1mH ID PD IAS 6 EAS THERMAL RESISTANCE Avalanche Energy TYPICAL TA= 70° C ID TA = 25 ° C 150V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 300mΩ @VGS = 10V 1.6A Gate-Source Voltage TA = 25 ° C 150 ± 20 Drain-Source Voltage Pulsed Drain Current1 Avalanche Current SYMBOL 1.6 LIMITS A VGS VDS V UNITS 1.3 IDM W 1.8 mJ 1.1 Junction & Storage Temperature Range SYMBOL °C-55 to 150 MAXIMUM REV 1.0 1 2014/12/3

Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 1 2 3 ± 100 nA 16 A 208 300 235 450 10 S 1010 1.2 Ω 3.2 1.6 A 1.3 V 43.8 nS 62 uC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. mΩ VGS = 10V, ID = 1.6A SYMBOL UNITS Gate-Body Leakage VGS(th) Forward Transconductance1 VGS = 4.5V, ID = 1.4A Drain-Source On-State Resistance1 RDS(ON) LIMITS VGS = 0V, ID = 250mA Gate Threshold Voltage VDS = VGS, ID = 250mA VDS = 100V, VGS = 0V, TJ = 55 ° C PARAMETER Total Gate Charge2 Ciss VDS = 10V, ID = 1.6A Input Capacitance Qgd Output Capacitance Qg gfs Zero Gate Voltage Drain Current IGSS Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS TEST CONDITIONS VDS = 0.5V(BR)DSS, VGS = 10V, ID = 1.6A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance IF = 1.6A, VGS = 0V nSVDD = 30V, ID @ 1.6A, VGS = 10V, RGEN = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS(TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr nCQgs mA DYNAMIC VDS = 120V, VGS = 0V Drain-Source Breakdown Voltage V VGS = 0V, VDS = 25V, f = 1MHz Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz pF STATIC IF = 1.6A, dl/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss On-State Drain Current1 ID(ON) VDS = 5V, VGS = 10V QrrReverse Recovery Charge REV 1.0 2 2014/12/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/12/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/12/3

Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/12/3