PC015BDA UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. EAS 2.2 MAXIMUM mJAvalanche Engergy L = 1 mH Avalanche Current IAS 2.1 -55 to 150Operating Junction & Storage Temperature Range TC = 25 ° C ID IDMPulsed Drain Current1,2 LIMITS VGS W UNITS 6.4 V± 20 A TYPICALSYMBOL Junction-to-Case RqJC 4 SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 300mΩ @VGS = 10V 6.4A ID 150V Continuous Drain Current2 PD TJ, TSTG TC = 25 ° C TC = 100 ° C THERMAL RESISTANCE Power Dissipation Rev 1.0 1 2018/8/1

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 1.3 1.8 2.3 ± 100 nA 225 450 220 300 25 S 614 1.4 Ω 1.6 5.1 6.4 A 1.3 V 40 nS 51 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Charge trr IF = 6A, dl/dt = 100A / msQrr Reverse Recovery Time PARAMETER SYMBOL V IGSS TEST CONDITIONS Gate-Body Leakage gfs VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V VGS = 10V, ID = 6A mA Drain-Source Breakdown Voltage VGS = 4.5V, ID = 6A VDS = 10V, ID = 6A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current IDSS Qg VDS = 75V, VGS = 10V, ID = 6A Qgd Qgs Crss Rg VGS = 0V, VDS = 0V, f = 1MHZ Ciss Coss RDS(ON) VSD Total Gate Charge2 Input Capacitance Output Capacitance Gate Threshold Voltage IS IF = 6A, VGS = 0V STATIC nC mΩ Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Gate Resistance Drain-Source On-State Resistance1 DYNAMIC pF Fall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) LIMITS UNITS nSVDD = 75V, ID @ 6A, VGS = 10V, RGS = 6Ω td(on) tr td(off) tf Rev 1.0 2 2018/8/1

N-Channel Enhancement Mode MOSFET Rev 1.0 3 2018/8/1

N-Channel Enhancement Mode MOSFET Rev 1.0 4 2018/8/1

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 Rev 1.0 5 2018/8/1

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel Rev 1.0 6 2018/8/1

N-Channel Enhancement Mode MOSFET Rev 1.0 7 2018/8/1

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev 1.0 8 2018/8/1