PC015BD UNIKC | Alldatasheet

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N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2Limited only by maximum temperature allowed. EAS 1.5 MAXIMUM mJAvalanche Engergy L = 0.1 mH Avalanche Current IAS 5.5 -55 to 150Operating Junction & Storage Temperature Range TC = 25 ° C ID IDMPulsed Drain Current1,2 LIMITS VGS W UNITS V± 20 A TYPICALSYMBOL Junction-to-Case RqJC 5 SYMBOL RDS(ON) TC = 100 ° C PARAMETERS/TEST CONDITIONS Gate-Source Voltage 300mΩ @VGS = 10V 6A ID 150V Continuous Drain Current2 PD TJ, TSTG TC = 25 ° C TC = 100 ° C THERMAL RESISTANCE Power Dissipation Rev 1.2 1 2016/1/29

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 150 1 1.6 3.0 ± 100 nA 15 A 285 450 235 300 10 S 991 1.3 Ω 8.5 6 A 1.3 V 72 nS 168 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. Reverse Recovery Charge trr IF = 7A, dlF/dt = 100A / msQrr Reverse Recovery Time PARAMETER SYMBOL V IGSS TEST CONDITIONS Gate-Body Leakage IDSS gfs VDS = 120V, VGS = 0V VDS = 100V, VGS = 0V , TJ = 70 ° C VDS = VGS, ID = 250mA VDS = 0V, VGS = ± 20V VGS = 10V, ID = 7A mA Drain-Source Breakdown Voltage VGS = 4.5V, ID = 6A VDS = 5V, ID = 7A VGS(th) Forward Transconductance1 VGS = 0V, ID = 250mAV(BR)DSS Zero Gate Voltage Drain Current Qg VDS = 75V, VGS = 10V, ID = 7A Qgd Qgs Crss Rg VGS = 0V, VDS = 0V, f = 1MHZ Ciss Coss On-State Drain Current1 RDS(ON) VSD Total Gate Charge2 Input Capacitance Output Capacitance Gate Threshold Voltage IS IF = 1.8A, VGS = 0V STATIC nC mΩ Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance VGS = 0V, VDS = 25V, f = 1MHz Gate Resistance ID(ON) VDS = 5V, VGS = 10V Drain-Source On-State Resistance1 DYNAMIC pF Fall Time2 Forward Voltage1 Continuous Current Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) LIMITS UNITS nSVDS = 75V, ID@ 7A, VGS = 10V, RGEN = 6Ω td(on) tr td(off) tf Rev 1.2 2 2016/1/29

N-Channel Enhancement Mode MOSFET Rev 1.2 3 2016/1/29

N-Channel Enhancement Mode MOSFET Rev 1.2 4 2016/1/29

N-Channel Enhancement Mode MOSFET *因为各家封装厂模具不同而外观略有所差异，不影响电性及Layout。 Rev 1.2 5 2016/1/29

N-Channel Enhancement Mode MOSFET A. Marking Information B. Tape&Reel Information:2500pcs/Reel Rev 1.2 6 2016/1/29

N-Channel Enhancement Mode MOSFET Rev 1.2 7 2016/1/29

N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) Rev 1.2 8 2016/1/29