PBL40305 ERICSSON | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
ruggednes for environmental variations.
- One IC handles GSM900, DCS 1800 and PCS1900 bands.
- Low cost solution.
- Inputs matched to 50 Ω
- Digital band select function.
- Analog gain control.
- Proven GaAs MESFET-reliability.
- Tape and Reel.
- SMD QSOP 28 package.
Figure 1. Block diagram. Figure 2. Package outlook.
Parameter Conditions Symbol Min. Typ. Max. Unit Supply voltage short supply spike V DD 6.0 V Supply voltage V DD 5.0 V Power control voltage V APC 4.2 V Operating Case Temperature T CASE -25 +80 °C Storage Temperature Range T STORAGE -30 +100 °C VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω , PIN = 10 dBm, f = 880 - 915 MHz and VAPC adjusted to give POUT = 34.5 dBm unless othervise Parameter Conditions Symbol Min. Typ. Max. Unit Output Power V APC = 3.15 V P OUT 34.5 34.7 dBm Power added efficiency P AE 50 53 % 2 nd harmonic - 0 dBm < P OUT < 34.5 dBm 2 f o -7.0 0 dBm 3 rd harmonic - 0 dBm < P OUT < 34.5 dBm 3 f o -27 0 dBm Isolation P IN = 11.5 dBm, VAPC <= 0.5 V -30 -20 dBm TAMB = -25 °C to +75 °C Power degradation P IN = 8.5 dBm, VSEL = 0.6 V, 33 dBm VAPC = 2.8 V, TAMB = -25 °C to +75 °C Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations All combinations of following when I DD < 2.2 A parameters: POUT =5 to 34.5dBm(50Ω ) All spurious < -36 dBm VDD = 2.7 V to 5.1 V TAMB = -25 °C to +75 °C Noise power 935 - 960 MHz -90 dBm 925 - 935 MHz RBW = 30 kHz -78 dBm Input S11 V APC = 0.5 V, -5.2 -5.0 dBm Input S11 P OUT = 34.5dBm -12 -6.0 dBm VCC = 3.2 V, TAMB = + 25°C, Z = 50 Ω , PIN = 9 dBm, f = 1710 - 1785 MHz / 1850 - 1910 MHz and VAPC adjusted to give POUT = 31.5 Output Power V APC = 3.15 V P OUT 31.5 31.7 dBm Power added efficiency P OUT = 31.5 dBm P AE 37 41 % 2 nd harmonic - 0 dBm < P OUT < 31.5 dBm 2 f o -8.0 0 dBm 3 rd harmonic - 0 dBm < P OUT < 31.5 dBm 3 f o -15 0 dBm Isolation P IN = 10.5 dBm, VAPC = 0.5 V -35 -30 dBm TAMB = -25 °C to +75 °C Power degradation P IN = 7.5 dBm, VDD = 2.85 V 30 30.5 dBm VAPC = 2.8 V, TAMB = -25 °C to +75 °C Maximum Ratings: Electrical Characteristics for PA in GSM 900 mode: TAMB = + 25°C unless otherwise stated. Electrical Characteristics for PA in DCS 1800 mode: Parameter Conditions Symbol Min. Typ. Max. Unit
Stability and leakage spurious Output VSWR = 6:1 all phases No parasitic oscillations All combinations of following when I DD < 2.20 A parameters: POUT =5 to 31.5dBm(50Ω ) All spurious < -36 dBm VDD = 2.7 V to 5.1 V RBW = 3 MHz TAMB = -25 °C to +75 °C Noise power 1805 - 1880 MHz -76 dBm 935 - 960 MHz RBW = 30 kHz -82 dBm 925 - 935 MHz -70 Input S11 V APC = 0.5 V, -5.0 -4.0 dBm Input S11 P OUT = 31.5dBm -14 -6.0 dBm Isolation at GSM RF output f = f0 -20 dBm when DCS is active f = 2 • f 0, f0 = 1750 - 1785 MHz -30 dBm Isolation at DCS RF output f = 2 • f0 -18 -15 dBm when GSM is active f = 3 • f 0, f0 = 880 - 915 MHz -30 -25 dBm Power control range GSM: VAPC = 0.5 - 3.15 V -20 34.5 dBm DCS: VAPC = 0.5 - 3.15 V -30 31.5 dBm Power control slope V APC = 0.5 - 3.15 V 150 dB/V Switching time Step in V ref giving POUT = -15 to 2 µs 32.5 dBm, up and down Power control current V APC <= 3.15 V I APC 45m A consumption VSEL = 0 - 3 V Band select current consumption VSEL = 0 - 3 V, VAPC <= 3.15 V I SEL 0.01 0.1 mA Negative supply current V SEL = 0 V, VAPC <= 3.15 V I NEG 5.5 7.0 mA consumption Input resistance V DC - VCA < 0.8 V R ON 100 150 Ω Charge current V DC = 1.5 - 5.0 V, VCA = 0 V I GSAT 6.7 10 mA Parameter Conditions Symbol Min. Typ. Max. Unit Common specifications: Parameter Conditions Symbol Min. Typ. Max. Unit Power regulation characteristics: Parameter Conditions Symbol Min. Typ. Max. Unit Current generator: Parameter Conditions Symbol Min. Typ. Max. Unit
Figure 3. Pin configuration.
1 CA Separate Current Source +terminal
2 VNEG Negative supply
3 VSEL Digital band select function
4 VAPC Analog output power control
5 VD1_DCS Power supply for 1st stage of high band chain
7 RFIN_DCS AC coupled 50ohm input
9 RFIN_GSM AC coupled 50ohm input
11 VD1_GSM Power supply for 1st stage of low band chain
20 VD2_GSM Power supply for 2nd stage of low band chain
22 VD2_DCS Power supply for 2nd stage of high band chain
28 VDC Separate Current Source -terminal
Figure 4. Pout and IDD versus VAPC at 900 MHz. Figure 5. Pout and IDD versus VAPC at 1750 MHz.
Specifications subject to change without notice. 1522-PBL 403 10 Uen Rev.A © Ericsson Microelectronics AB January 2001 Information given in this data sheet is believed to be accurate and reliable. However no responsibility is assumed for the consequences of its use nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Ericsson Microelectronics AB. These products are sold only according to Ericsson Microelectronics AB's general conditions of sale, unless otherwise confirmed in writing. Ericsson Microelectronics AB S-164 81 Kista-Stockholm, Sweden Telephone: (08) 757 50 00 www.ericsson.se/microe Package drawing, QSOP 28 L C 45 deg. α A D e HE BPin no 1 Dim. inchesmillimeters min. max. min. max. A B C D E H L 1.35 0.532 0.21 0.31 0.008 0.012 0.19 0.25 0.0075 0.0098 3.99 0.157 5.80 6.20 0.2284 0.2240 0.41 1.27 0.016 0.050 1.75 0.688 3.81 0.150 α = 0−8 deg. e 0.10 0.25 0.004 0.0098 0.635mm 0.025 inch ref. Dim. inchesmillimeters min. max. min. max. A B C D E H L 1.35 0.532 0.2 9.80 9.98 0.386 0.393 3.99 0.157 0.4 1.27 0.016 0.050 1.75 0.688 3.81 0.150 α = 0−8 deg. e 0.10 0.25 0.004 0.0098 0.635mm 0.025 inch ref.