PB606BA UNIKC | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 5

Technical content

N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS 100%RG TEST PDFN 2X2S 100%UIL TEST ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. RqJA Gate-Source Voltage ID TA= 70° C Operating Junction & Storage Temperature Range SYMBOL Pulsed Drain Current1 Avalanche Current IAS 12.8 EAS THERMAL RESISTANCE TYPICAL PD ID TA = 25 ° C 30V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) 16mΩ @VGS = 10V 7.8A Drain-Source Voltage TA= 25 ° C Power Dissipation Tj, Tstg W UNITS 6.2 8.2 mJ ± 20 IDM SYMBOL 7.8 LIMITS A VVGS VDS V MAXIMUM Junction-to-Ambient2 Avalanche Energy L = 0.1 mH 1.5 °C-55 to 150 REV 1.0 1 2014/12/17

N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.75 2.3 ± 100 nA 19 24 13 16 31 S 329 2.6 Ω 8.1 4.5 1.1 2.4 1.5 A 1 V 9.6 nS 2.9 nC 1Pulse test : Pulse Width  300 msec, Duty Cycle  2％. 2Independent of operating temperature. UNITS Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 55° C VGS = 4.5V, ID = 6A SYMBOL Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 7A Input Capacitance Qgd gfs PARAMETER VDS = 15V , ID = 7A Output Capacitance Qg(VGS=10V) td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS nCQgs TEST CONDITIONS VSD trr IF = 7A, VGS = 0V QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time nSVDD = 15V ID @ 7A, VGEN = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 15V, f = 1MHz mΩ mA DYNAMIC IF = 7A, dlF/dt = 100A / mS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA Rg IS VDS =24V, VGS = 0V Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 7A REV 1.0 2 2014/12/17

N-Channel Enhancement Mode MOSFET REV 1.0 3 2014/12/17

N-Channel Enhancement Mode MOSFET REV 1.0 4 2014/12/17

N-Channel Enhancement Mode MOSFET REV 1.0 5 2014/12/17