PB600BA UNIKC | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 8
Technical content
N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Coppe. Avalanche Energy L = 0.1 mH 1.7 71.7 °C-55 to 150 MAXIMUM Junction-to-Ambient2 IDM SYMBOL LIMITS A VVGS VDS V W UNITS 7.2 7.9 mJ 1.1 ± 20 TA= 25 ° C Power Dissipation Tj, Tstg 12mΩ @VGS = 10V 9A Drain-Source Voltage ID TA = 25 ° C 30V Continuous Drain Current TA= 70 ° C PARAMETERS/TEST CONDITIONS RDS(ON) SYMBOL Pulsed Drain Current1 Avalanche Current IAS 12.6 EAS THERMAL RESISTANCE TYPICAL PD Gate-Source Voltage ID TA= 70° C Operating Junction & Storage Temperature Range RqJA REV 1.1 1 2018/3/30
N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 1.3 1.7 2.5 ± 100 nA 11 17.5 9 12 45 S 706 103 3.1 Ω 2.6 3.6 1.5 A 1.1 V 11 nS 3 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Drain-Source On-State Resistance1 RDS(ON) VGS =10V, ID = 9A IF = 9A, dlF/dt = 100A / μS VDS = 0V, VGS = ± 20V IDSS Coss Crss LIMITS VGS = 0V, ID = 250mA Rg IS VDS =24V, VGS = 0V pF STATIC Drain-Source Breakdown Voltage V VGS = 0V, VDS = 15V, f = 1MHz mΩ mA DYNAMIC QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time nSVDD = 15V ID @ 9A, VGEN = 10V, RG = 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr nCQgs TEST CONDITIONS VSD trr IF = 9A, VGS = 0V td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 V(BR)DSS PARAMETER VDS = 15V , ID = 9A Output Capacitance gfs Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Ciss VDS =10V, ID = 9A Input Capacitance Qgd Qg(VGS=10V) VGS = 4.5V, ID = 9A SYMBOL Zero Gate Voltage Drain Current IGSS Gate Threshold Voltage VDS = VGS, ID = 250mA UNITS Gate Resistance VGS = 0V, VDS = 0V, f = 1MHz Total Gate Charge2 Qg(VGS=4.5V) Gate-Body Leakage VGS(th) Forward Transconductance1 VDS =20V, VGS = 0V, TJ = 55° C REV 1.1 2 2018/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 3 2018/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 4 2018/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 5 2018/3/30
N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：B1) B. Tape&Reel Information:3000pcs/Reel REV 1.1 6 2018/3/30
N-Channel Enhancement Mode MOSFET REV 1.1 7 2018/3/30
N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.1 8 2018/3/30