PB5G8JW UNIKC | Alldatasheet
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Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 ° C Unless Otherwise Noted) THERMAL RESISTANCE RATINGS UNITS ° C / W 1Pulse width limited by maximum junction temperature. 2The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper. A V 1.4 W0.9 3.9 Operating Junction & Storage Temperature Range SYMBOL °C-55 to 150 UNITS TYPICAL VDS 20 V SYMBOL IDM VGS LIMITS MAXIMUM Junction-to-Ambient2 THERMAL RESISTANCE ID TA = 25 ° C 20V PARAMETERS/TEST CONDITIONS RDS(ON) Drain-Source Voltage 35mΩ @VGS = 4.5V 5A Gate-Source Voltage TJ, Tstg RqJA ID Pulsed Drain Current1 Continuous Drain Current Power Dissipation PD TA = 70 ° C TA= 70 ° C TA = 25 ° C REV 1.0 1 2016/7/5
Dual N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) MIN TYP MAX 0.5 0.7 1.0 ± 10 nA 22 35 27 38 35 55 30 S 506 1.8 Ω 4.3 0.6 2.3 1.4 A 1 V 8.8 nS 1.4 nC 1Pulse test : Pulse Width 300 msec, Duty Cycle 2％. 2Independent of operating temperature. Drain-Source Breakdown Voltage V Zero Gate Voltage Drain Current IGSS VDS = VGS, ID = 250mA VGS = 0V, ID = 250mA Gate-Body Leakage VGS(th) TEST CONDITIONS IF = 5A, dlF/dt = 100A / mS UNITS Coss VGS = 4.5V, ID = 5A V(BR)DSS Ciss VDS = 5V, ID = 5A VDS = 0V, VGS = ± 8V gfs RDS(ON) LIMITS VGS = 2.5V, ID = 4.5A nC VGS = 0V, VDS = 0V, f = 1MHz Qgs mA DYNAMIC mΩ VDS = 16V, VGS = 0V pF IDSS Forward Transconductance1 QrrReverse Recovery Charge Continuous Current Forward Voltage1 Reverse Recovery Time IS VSD trr IF = 5A, VGS = 0V nSVDD= 10V, ID @ 5A, VGEN = 4.5V, RG= 6Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 ° C) td(on) tr td(off) tf Turn-On Delay Time2 Rise Time2 Turn-Off Delay Time2 Fall Time2 Gate Threshold Voltage Drain-Source On-State Resistance1 Rg VDS = 10V , ID = 5A Gate-Drain Charge2 Gate-Source Charge2 Reverse Transfer Capacitance Gate Resistance Total Gate Charge2 Qg(VGS=4.5V) Qg(VGS=2.5V) Crss Qgd Input Capacitance VGS = 0V, VDS = 10V, f = 1MHz PARAMETER Output Capacitance VGS = 1.8V , ID = 2A VDS = 10V, VGS = 0V, TJ = 55 ° C SYMBOL STATIC REV 1.0 2 2016/7/5
Dual N-Channel Enhancement Mode MOSFET REV 1.0 3 2016/7/5
Dual N-Channel Enhancement Mode MOSFET REV 1.0 4 2016/7/5
Dual N-Channel Enhancement Mode MOSFET REV 1.0 5 2016/7/5
Dual N-Channel Enhancement Mode MOSFET A. Marking Information(此产品代码为：B9) B. Tape&Reel Information:3000pcs/Reel REV 1.0 6 2016/7/5
Dual N-Channel Enhancement Mode MOSFET REV 1.0 7 2016/7/5
Dual N-Channel Enhancement Mode MOSFET D.Label rule 标签内容(Label content) REV 1.0 8 2016/7/5